MURATA Low ESL Ceramic Chip Capacitors

Features: • Low ESL: 80 to 120pH. Suitable for high speed (800MHz to 4GHz) IC decoupling. • Operating Temperature: X7R: -55°C to 125°C w/ a ±15 cap change over temperature range. X7S: -55°C to 125°C w/ a ±22 cap change over temperature range. Features: • Low ESL: 35 to 45pH. Suitable for hi

Chip Monolithic Ceramic Capacitors

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MURATA Low ESL Ceramic Chip Capacitors

Features: • Low ESL: 80 to 120pH. Suitable for high speed (800MHz to 4GHz) IC decoupling. • Operating Temperature: X7R: -55°C to 125°C w/ a ±15 cap change over temperature range. X7S: -55°C to 125°C w/ a ±22 cap change over temperature range. Features: • Low ESL: 35 to 45pH. Suitable for hi

MURATA Low ESL Ceramic Chip Capacitors

Features: • Low ESL: 80 to 120pH. Suitable for high speed (800MHz to 4GHz) IC decoupling. • Operating Temperature: X7R: -55°C to 125°C w/ a ±15 cap change over temperature range. X7S: -55°C to 125°C w/ a ±22 cap change over temperature range. Features: • Low ESL: 35 to 45pH. Suitable for hi

MURATA Low ESL Ceramic Chip Capacitors

Features: • Low ESL: 80 to 120pH. Suitable for high speed (800MHz to 4GHz) IC decoupling. • Operating Temperature: X7R: -55°C to 125°C w/ a ±15 cap change over temperature range. X7S: -55°C to 125°C w/ a ±22 cap change over temperature range. Features: • Low ESL: 35 to 45pH. Suitable for hi

MURATA Low ESL Ceramic Chip Capacitors

Features: • Low ESL: 80 to 120pH. Suitable for high speed (800MHz to 4GHz) IC decoupling. • Operating Temperature: X7R: -55°C to 125°C w/ a ±15 cap change over temperature range. X7S: -55°C to 125°C w/ a ±22 cap change over temperature range. Features: • Low ESL: 35 to 45pH. Suitable for hi

10 Terminals Low ESL Chip Multilayer Ceramic Capacitors for General Purpose

10 Terminals Low ESL Chip Multilayer Ceramic Capacitors for General Purpose

10 Terminals Low ESL Chip Multilayer Ceramic Capacitors for General Purpose

Low-voltage stabistor

DESCRIPTION Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package. FEATURES • Low-voltage stabilization • Forward voltage range: 480 mV to 1050 mV • Total power dissipation: max. 350 mW. APPLICATIONS • Low-voltage stabilization e.g. – Bias

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUH315 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. ■ STMicroelectronics

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUH315D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. ■ STMicroelectronic

Silicon NPN Transistor, Medium Power Amp

Features: • AF – HF Medium Power Amplifier

10 mm Seven Segment Display

Description The TDS.31.. series are 10 mm character seven segment LED displays in a very compact package. The displays are designed for a viewing distance up to 6 meters and available in four bright colors. The grey package surface and the evenly lighted untinted segments provide an optimum