Small Signal Schottky Barrier Diodes

Features • For general purpose applications • The LL101 series is a metal-on-silicon    Schottky barrier device which is protected    by a PN junction guard ring. • The low forward voltage drop and fast    switching make it ideal for protection of MOS    devices, steering, biasing and coupl

Small Signal Schottky Diode

FEATURES • For general purpose applications • The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes fo

SMALL SIGNAL SCHOTTKY DIODES

SMALL SIGNAL SCHOTTKY DIODES For General Purpose Applications

Surface Mount Si-Schottky Barrier Diodes

Surface Mount Si-Schottky Diodes • Nominal current 15 mA • Repetitive peak reverse voltage 40 60 V • Glass case MiniMELF SOD-80C • Weight approx. 0.04g • Standard packaging taped and reeled

Surface Mount Si-Schottky Diodes

Surface Mount Si-Schottky Diodes • Nominal current 15 mA • Repetitive peak reverse voltage 40 50 V • Glass case MiniMELF SOD-80C • Weight approx. 0.04g • Standard packaging taped and reeled

Surface Mount Si-Schottky Diodes

Surface Mount Si-Schottky Diodes • Nominal current 15 mA • Repetitive peak reverse voltage 40 50 V • Glass case MiniMELF SOD-80C • Weight approx. 0.04g • Standard packaging taped and reeled

SCHOTTKY BARRIER DIODES

FEATURES : • For general purpose applications • The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for

Small-Signal Diode Schottky Diodes

Features ♦ For general purpose applications ♦ The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. ♦ The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for f

Silicon Schottky Barrier Diode for general purpose applications

SILICON SCHOTTKY BARRIER DIODES for general purpose applications The LL101 Series is a metal on silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupl

30mA Surface Mount Schottky Barrier Diode

Features ● For general purpose applications ● The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. ● The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for f

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 60 - 40 V POWER DIDDIPATION: 400 mW FEATURES ◇ For general purpose applications ◇ The low forward voltage drop and fast switching marking it ideal for protection of MOS devices, steering, biasing and couping diodes for fast switching and low logic level applications. ◇ Integrat

Schottky Diodes

FEATURES ◆ For general purpose applications. ◆ The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fas

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • For general purpose applications • The LL101 series is a Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and

SILICON SCHOTTKY BARRIER DIODES

SILICON SCHOTTKY BARRIER DIODES for general purpose applications The LL101 Series is a metal on silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupl

Schottky Barrier Rectifiers

VOLTAGE RANGE: 60 - 40 V POWER DIDDIPATION: 400 mW Features ◇ For general purpose applications ◇ The low forward voltage drop and fast switching marking it ideal for protection of MOS devices,steering, biasing and couping diodes for fast switching and low logic level applications. ◇ Integrate

SMALL SINGAL SCHOTTKY DIODES

FEATURES • For general purpose applications • The LL101 series is a Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling dio

肖特基二极体

小信号肖特基二极管

0.03A,40V,Surface Mount Small Signal Schottky Diodes

SMD Schottky Barrier Diodes

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SMD Small Signal Schottky Diodes

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Surface Mount Si-Schottky Diodes

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Small Signal Schottky Diodes

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Small Signal Schottky Diodes

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Small Signal Schottky Barrier Diodes

Features • For general purpose applications • The LL101 series is a metal-on-silicon    Schottky barrier device which is protected    by a PN junction guard ring. • The low forward voltage drop and fast    switching make it ideal for protection of MOS    devices, steering, biasing and coupl

Small Signal Schottky Barrier Diodes

Features • For general purpose applications • The LL101 series is a metal-on-silicon    Schottky barrier device which is protected    by a PN junction guard ring. • The low forward voltage drop and fast    switching make it ideal for protection of MOS    devices, steering, biasing and coupl

封装/外壳：DO-213AC，MINI-MELF，SOD-80 包装：散装 描述：DIODE SCHOTTKY 40V 30MA SOD80 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-213AC，MINI-MELF，SOD-80 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 40V 30MA SOD80 分立半导体产品 二极管 - 整流器 - 单

Small Signal Schottky Diodes

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Small Signal Schottky Diodes

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HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

WIDE BAND AMPLIFIER CHIPS

DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the

Operational Amplifiers

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Operational Amplifiers

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