型号 功能描述 生产厂家&企业 LOGO 操作
LKZ12B3

包装:片状 描述:LABEL ID/RATINGS 0.49\ 标签,标志,护栏,标识 标签,贴纸,贴标 - 预印

ETC

知名厂家

LKZ12B3

包装:片状 描述:LABEL ID/RATINGS 0.49\ 标签,标志,护栏,标识 标签,贴纸,贴标 - 预印

ETC

知名厂家

500 mW Zener Diode 1.7 to 37.2 Volts

Features • Low Leakage • Low Zener Impedance • High Reliability

MCC

美微科

SILICON EPITAXIAL PLANER ZENER DIODES

for stabilized power supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.

SEMTECH_ELEC

先之科半导体

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.

RENESAS

瑞萨

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.

HitachiHitachi Semiconductor

日立日立公司

3rd Generation 1200V/1A SiC Schottky Barrier Diode

文件:664.2 Kbytes Page:9 Pages

SANAN

三安光电

更新时间:2025-8-9 16:06:00
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