CMOS 2M (256K x 8/128K x 16) MROM

DESCRIPTION The LH532000B is a 2M-bit mask-programmable ROM with two programmable memory organizations, byte and word modes. It is fabricated using silicon-gate CMOS process technology. FEATURES • 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode

CMOS 2M (256K x 8/128K x 16) MROM

DESCRIPTION The LH532000B-1 is a CMOS 2M-bit mask-programmable ROM organized as 262,144 × 8 bits (Byte mode) or 131,072 × 16 bits (Word mode) that can be selected by BYTE input pin. It is fabricated using silicon-gate CMOS process technology. FEATURES • 262,144 words × 8 bit organization (Byte

CMOS 2M (128K x 16) MROM

DESCRIPTION The LH532048 is a 2M-bit mask-programmable ROM organized as 131,072 × 16 bits. It is fabricated using silicon-gate CMOS process technology. FEATURES • 131,072 words × 16 bit organization • Access time: 100 ns (MAX.) • Static operation • TTL compatible I/O • Three-state outputs

CMOS 2M (256K x 8) MROM

DESCRIPTION The LH532100B is a 2M-bit mask-programmable ROM organized as 262,144 × 8 bits. It is fabricated using silicon-gate CMOS process technology. FEATURES • 262,144 words × 8 bit organization • Access time: 150 ns (MAX.) • Low-power consumption: Operating: 275 mW (MAX.) Standb

CMOS 2M (256K x 8) MROM

DESCRIPTION The LH532100B-1 is a CMOS 2M-bit mask-programmable ROM organized as 262,144 × 8 bits. It is fabricated using silicon-gate process technology. FEATURES • 262,144 words × 8 bit organization • Access time: 120 ns (MAX.) • Static operation • TTL compatible I/O • Three-state outputs

CMOS 24M (3M x 8/1.5M x 16) MROM

DESCRIPTION The LH5324500 is a 24M-bit mask-programmable ROM organized as 3,145,728 × 8 bits (Byte mode) or 1,572,864 × 16 bits (Word mode) that can be selected by a BYTE input pin. It is fabricated using silicon-gate CMOS process technology. FEATURES • 3,145,728 words × 8 bit organization (Byt

CMOS 24M (1.5M x 16) MROM

DESCRIPTION The LH5324C00 is a 24M-bit mask-programmable ROM organized as 1,572,864 × 16 bits. It is fabricated using silicon-gate CMOS process technology. FEATURES • 1,572,864 × 16 bit organization • Access time: 120 ns (MAX.) • Supply current: – Operating: 80 mA (MAX.) – Standby:

CMOS 24M (3M x 8/1.5M x 16) Mask-Programmable ROM

DESCRIPTION The LH5324P00A is a 24M-bit mask-programmable ROM organized as 3,145,728 × 8 bits (Byte mode) or 1,572,864 × 16 bits (Word mode) that can be selected by a BYTE input pin. It is fabricated using silicon-gate CMOS process technology. FEATURES • 3,145,728 words × 8 bit organization (By

CMOS 256K (32K x 8) MROM

DESCRIPTION The LH53259 is a mask-programmable ROM organized as 32,768 × 8 bits. It is fabricated using silicon-gate CMOS process technology. FEATURES • 32,768 words × 8 bit organization • Access time: 150 ns (MAX.) • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 µW

CMOS 2M (256K x 8/128K x 16) MROM

DESCRIPTION The LH532600 is a 2M-bit mask-programmable ROM organized as 262,144 × 8 bits (Byte mode) or 131,072 × 16 bits (Word mode) that can be selected by BYTE input pin. It is fabricated using silicon-gate CMOS process technology. FEATURES • 262,144 words × 8 bit organization (Byte mode)

CMOS 2M (128K x 16) MROM

CMOS 2M (256K x 8) MROM

CMOS 2M (256K x 8) MROM

CMOS 24M (3M x 8) MROM

文件：52.45 Kbytes Page：6 Pages

횠12.7mm mounting Product will operate over a wide voltage range

文件：256.589 Kbytes Page：4 Pages

Customer Specification

文件：67.36 Kbytes Page：2 Pages

Limit Alarms (potentiometer adj.) A-UNIT

文件：133.51 Kbytes Page：4 Pages

Limit Alarms (potentiometer adj.) A-UNIT

文件：133.51 Kbytes Page：4 Pages

Limit Alarms (potentiometer adj.) A-UNIT

文件：133.51 Kbytes Page：4 Pages