CMOS 1M (128K x 8) MROM

DESCRIPTION The LH531000B is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. FEATURES • 131,072 words × 8 bit organization • Access time: 150 ns (MAX.) • Low power consumption: Operating: 192.5 mW (MAX.) Standby: 55

CMOS 1M (128K x 8) 3 V-Drive MROM

DESCRIPTION The LH531000B-S is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. FEATURES • 131,072 words × 8 bit organization • Access time: 500 ns (MAX.) • Power consumption: Operating: 64.8 mW (MAX.) Standby: 108 µ

1M BIT (128K WORD X8 BIT) CMOS MASK ROM SILICON GATE CMOS

DESCRIPTION The TC531000AP/AF is a 1,048,576 bits read only memory organized as 131,072 words by 8 bits with a low bit cost, thus being suitable for use in program memory of microprocessor, especially character generator. The TC531000AP/AF using CMOS techrology is most suitable for low power

1M BIT (128K WORD X8 BIT) CMOS MASK ROM SILICON GATE CMOS

DESCRIPTION The TC531000AP/AF is a 1,048,576 bits read only memory organized as 131,072 words by 8 bits with a low bit cost, thus being suitable for use in program memory of microprocessor, especially character generator. The TC531000AP/AF using CMOS techrology is most suitable for low power