型号 功能描述 生产厂家 企业 LOGO 操作

8M (1M 횞 8) Flash Memory

DESCRIPTION The LH28F008SA is a high-performance 8M (8,388,608 bit) memory organized at 1M (1,048,576 bytes) of 8 bits each. Sixteen 64K (65,536 Byte) blocks are included on the LH28F008SA. A memory map is shown in Figure 4 of this specification. A block erase operation erases one of the sixteen

SHARPSharp Corporation

夏普

4M (512K 횞 8, 256K 횞 16) Flash Memory

DESCRIPTION The LH28F400SU-NC is a high performance 4M (4,194,304) block erasable non-volatile random access memory organized as either 256K × 16 or 512K × 8. The LH28F400SU-NC includes thirty-two 16K (16,384) blocks. A chip memory map is shown in Figure 5. The implementation of a new architectu

SHARPSharp Corporation

夏普

8M (1M 횞 8) Flash Memory

DESCRIPTION The LH28F008SA is a high-performance 8M (8,388,608 bit) memory organized at 1M (1,048,576 bytes) of 8 bits each. Sixteen 64K (65,536 Byte) blocks are included on the LH28F008SA. A memory map is shown in Figure 4 of this specification. A block erase operation erases one of the sixteen

SHARPSharp Corporation

夏普

8M (1M 횞 8) Flash Memory

DESCRIPTION The LH28F008SA is a high-performance 8M (8,388,608 bit) memory organized at 1M (1,048,576 bytes) of 8 bits each. Sixteen 64K (65,536 Byte) blocks are included on the LH28F008SA. A memory map is shown in Figure 4 of this specification. A block erase operation erases one of the sixteen

SHARPSharp Corporation

夏普

8 MBIT(1 MBIT x 8)FLASH MEMORY

SHARPSharp Corporation

夏普

8M (1M 횞 8) Flash Memory

DESCRIPTION The LH28F008SA is a high-performance 8M (8,388,608 bit) memory organized at 1M (1,048,576 bytes) of 8 bits each. Sixteen 64K (65,536 Byte) blocks are included on the LH28F008SA. A memory map is shown in Figure 4 of this specification. A block erase operation erases one of the sixteen

SHARPSharp Corporation

夏普

8M (1M 횞 8) Flash Memory

DESCRIPTION The LH28F008SA is a high-performance 8M (8,388,608 bit) memory organized at 1M (1,048,576 bytes) of 8 bits each. Sixteen 64K (65,536 Byte) blocks are included on the LH28F008SA. A memory map is shown in Figure 4 of this specification. A block erase operation erases one of the sixteen

SHARPSharp Corporation

夏普

8 MBIT(1 MBIT x 8) FLASH MEMORY

DESCRIPTION The LH28F008SA is a high-performance 8M (8,388,608 bit) memory organized at 1M (1,048,576 bytes) of 8 bits each. Sixteen 64K (65,536 Byte) blocks are included on the LH28F008SA. A memory map is shown in Figure 4 of this specification. A block erase operation erases one of the sixteen

SHARPSharp Corporation

夏普

8M (1M 횞 8) Flash Memory

DESCRIPTION The LH28F008SA is a high-performance 8M (8,388,608 bit) memory organized at 1M (1,048,576 bytes) of 8 bits each. Sixteen 64K (65,536 Byte) blocks are included on the LH28F008SA. A memory map is shown in Figure 4 of this specification. A block erase operation erases one of the sixteen

SHARPSharp Corporation

夏普

8M (1M 횞 8) Flash Memory

DESCRIPTION The LH28F008SA is a high-performance 8M (8,388,608 bit) memory organized at 1M (1,048,576 bytes) of 8 bits each. Sixteen 64K (65,536 Byte) blocks are included on the LH28F008SA. A memory map is shown in Figure 4 of this specification. A block erase operation erases one of the sixteen

SHARPSharp Corporation

夏普

8 MBIT(1 MBIT x 8) FLASH MEMORY

DESCRIPTION The LH28F008SA is a high-performance 8M (8,388,608 bit) memory organized at 1M (1,048,576 bytes) of 8 bits each. Sixteen 64K (65,536 Byte) blocks are included on the LH28F008SA. A memory map is shown in Figure 4 of this specification. A block erase operation erases one of the sixteen

SHARPSharp Corporation

夏普

8M (1M 횞 8) Flash Memory

INTRODUCTION SHARP’S LH28F008SC FlashFile™ memory with SmartVoltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. Its symmetrically-blocked architecture, flexible voltage and extended cycling provide for highly flexible componen

SHARPSharp Corporation

夏普

Flash Memory 8M (1MB 횞 8)

SHARP’s LH28F008SCT-L85 Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. 8M-BIT (1MB x 8) SmartVoltage Flash MEMORY ■ SmartVoltage Technology - 2.7V(Read-Only), 3.3V or 5V VCC - 3.3V, 5V or 1

SHARPSharp Corporation

夏普

Flash Memory 8M (1MB 횞 8)

SHARP’s LH28F008SCT-L85 Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. 8M-BIT (1MB x 8) SmartVoltage Flash MEMORY ■ SmartVoltage Technology - 2.7V(Read-Only), 3.3V or 5V VCC - 3.3V, 5V or 1

SHARPSharp Corporation

夏普

8-MBIT(1 MB x 8) SmartVoltage Flash MEMORY

8-MBIT(1 MB x 8) SmartVoltage Flash MEMORY

SHARPSharp Corporation

夏普

Flash Memory 8M (1MB 횞 8)

SHARP’s LH28F008SCT-L85 Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. 8M-BIT (1MB x 8) SmartVoltage Flash MEMORY ■ SmartVoltage Technology - 2.7V(Read-Only), 3.3V or 5V VCC - 3.3V, 5V or 1

SHARPSharp Corporation

夏普

Flash Memory 8M (1MB 횞 8)

SHARP’s LH28F008SCT-L85 Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. 8M-BIT (1MB x 8) SmartVoltage Flash MEMORY ■ SmartVoltage Technology - 2.7V(Read-Only), 3.3V or 5V VCC - 3.3V, 5V or 1

SHARPSharp Corporation

夏普

8-MBIT(1 MB x 8) SmartVoltage Flash MEMORY

8-MBIT(1 MB x 8) SmartVoltage Flash MEMORY

SHARPSharp Corporation

夏普

Flash Memory 8M (1MB 횞 8)

SHARP’s LH28F008SCT-L85 Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. 8M-BIT (1MB x 8) SmartVoltage Flash MEMORY ■ SmartVoltage Technology - 2.7V(Read-Only), 3.3V or 5V VCC - 3.3V, 5V or 1

SHARPSharp Corporation

夏普

Flash Memory 8M (1MB 횞 8)

SHARP’s LH28F008SCT-L85 Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. 8M-BIT (1MB x 8) SmartVoltage Flash MEMORY ■ SmartVoltage Technology - 2.7V(Read-Only), 3.3V or 5V VCC - 3.3V, 5V or 1

SHARPSharp Corporation

夏普

Flash Memory 8M (1MB 횞 8)

SHARP’s LH28F008SCT-L85 Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. 8M-BIT (1MB x 8) SmartVoltage Flash MEMORY ■ SmartVoltage Technology - 2.7V(Read-Only), 3.3V or 5V VCC - 3.3V, 5V or 1

SHARPSharp Corporation

夏普

Flash Memory 8M (1MB 횞 8)

SHARP’s LH28F008SCT-L85 Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. 8M-BIT (1MB x 8) SmartVoltage Flash MEMORY ■ SmartVoltage Technology - 2.7V(Read-Only), 3.3V or 5V VCC - 3.3V, 5V or 1

SHARPSharp Corporation

夏普

8-MBIT(1 MB x 8) SmartVoltage Flash MEMORY

8-MBIT(1 MB x 8) SmartVoltage Flash MEMORY

SHARPSharp Corporation

夏普

8-MBIT(1 MB x 8) SmartVoltage Flash MEMORY

8-MBIT(1 MB x 8) SmartVoltage Flash MEMORY

SHARPSharp Corporation

夏普

Flash Memory 8M (1MB 횞 8)

SHARP’s LH28F008SCT-L85 Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. 8M-BIT (1MB x 8) SmartVoltage Flash MEMORY ■ SmartVoltage Technology - 2.7V(Read-Only), 3.3V or 5V VCC - 3.3V, 5V or 1

SHARPSharp Corporation

夏普

Flash Memory 8M (1MB 횞 8)

SHARP’s LH28F008SCT-L85 Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. 8M-BIT (1MB x 8) SmartVoltage Flash MEMORY ■ SmartVoltage Technology - 2.7V(Read-Only), 3.3V or 5V VCC - 3.3V, 5V or 1

SHARPSharp Corporation

夏普

8-MBIT(1 MB x 8) SmartVoltage Flash MEMORY

DESCRIPTION The LH28F008SC-V/SCH-V flash memories with Smart 5 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. FEATURES • Smart 5 technology – 5 V VCC – 5 V or 12 V VPP • High performance read access time LH28F0

SHARPSharp Corporation

夏普

M-bit (1 MB x 8) Smart 5 Flash Memories

FEATURES • Smart 5 technology – 5 V VCC – 5 V or 12 V VPP • High performance read access time LH28F008SC-V85/SCH-V85 – 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V) LH28F008SC-V12/SCH-V12 – 120 ns (5.0±0.5 V) • Enhanced automated suspend options – Byte write suspend to read – Block erase suspend

SHARPSharp Corporation

夏普

Flash Memory 8M (1MB 횞 8)

SHARP’s LH28F008SCT-L85 Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. 8M-BIT (1MB x 8) SmartVoltage Flash MEMORY ■ SmartVoltage Technology - 2.7V(Read-Only), 3.3V or 5V VCC - 3.3V, 5V or 1

SHARPSharp Corporation

夏普

Flash Memory 8M (1MB 횞 8)

SHARP’s LH28F008SCT-L85 Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. 8M-BIT (1MB x 8) SmartVoltage Flash MEMORY ■ SmartVoltage Technology - 2.7V(Read-Only), 3.3V or 5V VCC - 3.3V, 5V or 1

SHARPSharp Corporation

夏普

M-bit (1 MB x 8) Smart 5 Flash Memories

FEATURES • Smart 5 technology – 5 V VCC – 5 V or 12 V VPP • High performance read access time LH28F008SC-V85/SCH-V85 – 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V) LH28F008SC-V12/SCH-V12 – 120 ns (5.0±0.5 V) • Enhanced automated suspend options – Byte write suspend to read – Block erase suspend

SHARPSharp Corporation

夏普

Flash Memory 8M (1MB 횞 8)

SHARP’s LH28F008SCT-L85 Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. 8M-BIT (1MB x 8) SmartVoltage Flash MEMORY ■ SmartVoltage Technology - 2.7V(Read-Only), 3.3V or 5V VCC - 3.3V, 5V or 1

SHARPSharp Corporation

夏普

Flash Memory 8M (1MB 횞 8)

SHARP’s LH28F008SCT-L85 Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. 8M-BIT (1MB x 8) SmartVoltage Flash MEMORY ■ SmartVoltage Technology - 2.7V(Read-Only), 3.3V or 5V VCC - 3.3V, 5V or 1

SHARPSharp Corporation

夏普

Smart voltage 8M bit flash memory

Smart voltage 8M bit flash memory

SHARPSharp Corporation

夏普

Flash Memory 8M (1MB 횞 8)

SHARP’s LH28F008SCT-L85 Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. 8M-BIT (1MB x 8) SmartVoltage Flash MEMORY ■ SmartVoltage Technology - 2.7V(Read-Only), 3.3V or 5V VCC - 3.3V, 5V or 1

SHARPSharp Corporation

夏普

Flash Memory

Flash Memory 8M (1M ×8)

SHARPSharp Corporation

夏普

Flash Memory 8M (1MB 횞 8)

SHARP’s LH28F008SCT-L85 Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. 8M-BIT (1MB x 8) SmartVoltage Flash MEMORY ■ SmartVoltage Technology - 2.7V(Read-Only), 3.3V or 5V VCC - 3.3V, 5V or 1

SHARPSharp Corporation

夏普

8 M-bit (1 MB x 8) Smart 5

DESCRIPTION The LH28F008SC-V/SCH-V flash memories with Smart 5 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. FEATURES • Smart 5 technology – 5 V VCC – 5 V or 12 V VPP • High performance read access time LH28F0

SHARPSharp Corporation

夏普

M-bit (1 MB x 8) Smart 5 Flash Memories

FEATURES • Smart 5 technology – 5 V VCC – 5 V or 12 V VPP • High performance read access time LH28F008SC-V85/SCH-V85 – 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V) LH28F008SC-V12/SCH-V12 – 120 ns (5.0±0.5 V) • Enhanced automated suspend options – Byte write suspend to read – Block erase suspend

SHARPSharp Corporation

夏普

M-bit (1 MB x 8) Smart 5 Flash Memories

FEATURES • Smart 5 technology – 5 V VCC – 5 V or 12 V VPP • High performance read access time LH28F008SC-V85/SCH-V85 – 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V) LH28F008SC-V12/SCH-V12 – 120 ns (5.0±0.5 V) • Enhanced automated suspend options – Byte write suspend to read – Block erase suspend

SHARPSharp Corporation

夏普

M-bit (1 MB x 8) Smart 5 Flash Memories

FEATURES • Smart 5 technology – 5 V VCC – 5 V or 12 V VPP • High performance read access time LH28F008SC-V85/SCH-V85 – 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V) LH28F008SC-V12/SCH-V12 – 120 ns (5.0±0.5 V) • Enhanced automated suspend options – Byte write suspend to read – Block erase suspend

SHARPSharp Corporation

夏普

M-bit (1 MB x 8) Smart 5 Flash Memories

FEATURES • Smart 5 technology – 5 V VCC – 5 V or 12 V VPP • High performance read access time LH28F008SC-V85/SCH-V85 – 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V) LH28F008SC-V12/SCH-V12 – 120 ns (5.0±0.5 V) • Enhanced automated suspend options – Byte write suspend to read – Block erase suspend

SHARPSharp Corporation

夏普

Flash Memory

SHARPSharp Corporation

夏普

8M Flash Memory 1M (x8)

SHARPSharp Corporation

夏普

8M Flash Memory 1M (x8)

文件:1.44001 Mbytes Page:34 Pages

SHARPSharp Corporation

夏普

8M Flash Memory

文件:1.42955 Mbytes Page:34 Pages

SHARPSharp Corporation

夏普

8M Flash Memory

SHARPSharp Corporation

夏普

封装/外壳:40-TFSOP(0.724",18.40mm 宽) 包装:卷带(TR)剪切带(CT) 描述:IC FLASH 8MBIT PARALLEL 40TSOP 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:40-TFSOP(0.724",18.40mm 宽) 包装:卷带(TR)剪切带(CT) 描述:IC FLASH 8MBIT PARALLEL 40TSOP 集成电路(IC) 存储器

ETC

知名厂家

Flash Memory 8M (1M 횞8)

文件:3.15129 Mbytes Page:49 Pages

SHARPSharp Corporation

夏普

Flash Memory 8M (1M 횞8)

文件:3.13079 Mbytes Page:47 Pages

SHARPSharp Corporation

夏普

Flash Memory 8M (1M 횞8)

文件:3.13079 Mbytes Page:47 Pages

SHARPSharp Corporation

夏普

Flash Memory 8M (1M 횞8)

文件:3.15129 Mbytes Page:49 Pages

SHARPSharp Corporation

夏普

8-MBIT (1-MBIT x 8) FlashFileTM MEMORY

Intel’s 28F008SA 8-Mbit FlashFileTM Memory is the highest density nonvolatile read/write solution for solid-state storage. The 28F008SA’s extended cycling, symmetrically blocked architecture, fast access time, write automation and low power consumption provide a more reliable, lower power, lighter

Intel

英特尔

8 MBIT (1 MBIT x 8) FLASH MEMORY

PRODUCT OVERVIEW The VE28F008 is a high-performance 8 Mbit (8,388,608 bit) memory organized as 1 Mbyte (1,048,576 bytes) of 8 bits each. Sixteen 64 Kbyte (65,536 byte) blocks are included on the VE28F008. A memory map is shown in Figure 4 of this specification. A block erase operation erases one

Intel

英特尔

8-MBIT (1 MBIT x 8) FLASHFILETM MEMORY

PRODUCT OVERVIEW The 28F008SA-L is a high-performance 8-Mbit (8,388,608-bit) memory organized as 1 Mbyte (1,048,576 bytes) of 8 bits each. Sixteen 64-Kbyte (65,536-byte) blocks are included on the 28F008SA-L. A memory map is shown in Figure 6 of this specification. A block erase operation erases

Intel

英特尔

8 MBIT (1 MBIT x 8) FLASH MEMORY

PRODUCT OVERVIEW The VE28F008 is a high-performance 8 Mbit (8,388,608 bit) memory organized as 1 Mbyte (1,048,576 bytes) of 8 bits each. Sixteen 64 Kbyte (65,536 byte) blocks are included on the VE28F008. A memory map is shown in Figure 4 of this specification. A block erase operation erases one

Intel

英特尔

M-bit (1 MB x 8) Smart 5 Flash Memories

FEATURES • Smart 5 technology – 5 V VCC – 5 V or 12 V VPP • High performance read access time LH28F008SC-V85/SCH-V85 – 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V) LH28F008SC-V12/SCH-V12 – 120 ns (5.0±0.5 V) • Enhanced automated suspend options – Byte write suspend to read – Block erase suspend

SHARPSharp Corporation

夏普

LH28F008产品属性

  • 类型

    描述

  • 型号

    LH28F008

  • 制造商

    Sharp Microelectronics Corporation

  • 功能描述

    Flash Mem Parallel 3.3V 8M-Bit 1M x 8 100ns 40-Pin TSOP

更新时间:2025-12-29 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SHARP
23+
TSOP40
20000
全新原装假一赔十
SHARP
TSOP40
109
全新原装进口自己库存优势
Sharp Microelectronics
22+
40TSOP
9000
原厂渠道,现货配单
SHARP
18+
TSOP
18547
全新原装现货,可出样品,可开增值税发票
SHARP
SOP
68500
一级代理 原装正品假一罚十价格优势长期供货
SHARP
2015+
TSOP40
19889
一级代理原装现货,特价热卖!
SHARP
23+
NA
5466
专做原装正品,假一罚百!
SHARP
25+23+
New
33801
绝对原装正品现货,全新深圳原装进口现货
SHARP
22+
TSOP
3000
原装正品,支持实单
SHARP
SMD
216
全新原装100真实现货供应

LH28F008数据表相关新闻