型号 功能描述 生产厂家&企业 LOGO 操作
LH28F008SA

8M (1M 횞 8) Flash Memory

DESCRIPTION The LH28F008SA is a high-performance 8M (8,388,608 bit) memory organized at 1M (1,048,576 bytes) of 8 bits each. Sixteen 64K (65,536 Byte) blocks are included on the LH28F008SA. A memory map is shown in Figure 4 of this specification. A block erase operation erases one of the sixteen

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

LH28F008SA

4M (512K 횞 8, 256K 횞 16) Flash Memory

DESCRIPTION The LH28F400SU-NC is a high performance 4M (4,194,304) block erasable non-volatile random access memory organized as either 256K × 16 or 512K × 8. The LH28F400SU-NC includes thirty-two 16K (16,384) blocks. A chip memory map is shown in Figure 5. The implementation of a new architectu

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8M (1M 횞 8) Flash Memory

DESCRIPTION The LH28F008SA is a high-performance 8M (8,388,608 bit) memory organized at 1M (1,048,576 bytes) of 8 bits each. Sixteen 64K (65,536 Byte) blocks are included on the LH28F008SA. A memory map is shown in Figure 4 of this specification. A block erase operation erases one of the sixteen

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8M (1M 횞 8) Flash Memory

DESCRIPTION The LH28F008SA is a high-performance 8M (8,388,608 bit) memory organized at 1M (1,048,576 bytes) of 8 bits each. Sixteen 64K (65,536 Byte) blocks are included on the LH28F008SA. A memory map is shown in Figure 4 of this specification. A block erase operation erases one of the sixteen

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 MBIT(1 MBIT x 8)FLASH MEMORY

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8M (1M 횞 8) Flash Memory

DESCRIPTION The LH28F008SA is a high-performance 8M (8,388,608 bit) memory organized at 1M (1,048,576 bytes) of 8 bits each. Sixteen 64K (65,536 Byte) blocks are included on the LH28F008SA. A memory map is shown in Figure 4 of this specification. A block erase operation erases one of the sixteen

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8M (1M 횞 8) Flash Memory

DESCRIPTION The LH28F008SA is a high-performance 8M (8,388,608 bit) memory organized at 1M (1,048,576 bytes) of 8 bits each. Sixteen 64K (65,536 Byte) blocks are included on the LH28F008SA. A memory map is shown in Figure 4 of this specification. A block erase operation erases one of the sixteen

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 MBIT(1 MBIT x 8) FLASH MEMORY

DESCRIPTION The LH28F008SA is a high-performance 8M (8,388,608 bit) memory organized at 1M (1,048,576 bytes) of 8 bits each. Sixteen 64K (65,536 Byte) blocks are included on the LH28F008SA. A memory map is shown in Figure 4 of this specification. A block erase operation erases one of the sixteen

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8M (1M 횞 8) Flash Memory

DESCRIPTION The LH28F008SA is a high-performance 8M (8,388,608 bit) memory organized at 1M (1,048,576 bytes) of 8 bits each. Sixteen 64K (65,536 Byte) blocks are included on the LH28F008SA. A memory map is shown in Figure 4 of this specification. A block erase operation erases one of the sixteen

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8M (1M 횞 8) Flash Memory

DESCRIPTION The LH28F008SA is a high-performance 8M (8,388,608 bit) memory organized at 1M (1,048,576 bytes) of 8 bits each. Sixteen 64K (65,536 Byte) blocks are included on the LH28F008SA. A memory map is shown in Figure 4 of this specification. A block erase operation erases one of the sixteen

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8 MBIT(1 MBIT x 8) FLASH MEMORY

DESCRIPTION The LH28F008SA is a high-performance 8M (8,388,608 bit) memory organized at 1M (1,048,576 bytes) of 8 bits each. Sixteen 64K (65,536 Byte) blocks are included on the LH28F008SA. A memory map is shown in Figure 4 of this specification. A block erase operation erases one of the sixteen

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8M Flash Memory 1M (x8)

文件:1.44001 Mbytes Page:34 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

8M Flash Memory

文件:1.42955 Mbytes Page:34 Pages

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

封装/外壳:40-TFSOP(0.724",18.40mm 宽) 包装:管件 描述:IC FLASH 8MBIT PARALLEL 40TSOP 集成电路(IC) 存储器

SharpMicroelectronics

封装/外壳:40-TFSOP(0.724",18.40mm 宽) 包装:卷带(TR)剪切带(CT) 描述:IC FLASH 8MBIT PARALLEL 40TSOP 集成电路(IC) 存储器

SharpMicroelectronics

8 MBIT (1 MBIT x 8) FLASH MEMORY

PRODUCT OVERVIEW The VE28F008 is a high-performance 8 Mbit (8,388,608 bit) memory organized as 1 Mbyte (1,048,576 bytes) of 8 bits each. Sixteen 64 Kbyte (65,536 byte) blocks are included on the VE28F008. A memory map is shown in Figure 4 of this specification. A block erase operation erases one

Intel

英特尔

8-MBIT (1-MBIT x 8) FlashFileTM MEMORY

Intel’s 28F008SA 8-Mbit FlashFileTM Memory is the highest density nonvolatile read/write solution for solid-state storage. The 28F008SA’s extended cycling, symmetrically blocked architecture, fast access time, write automation and low power consumption provide a more reliable, lower power, lighter

Intel

英特尔

8 MBIT (1 MBIT x 8) FLASH MEMORY

PRODUCT OVERVIEW The VE28F008 is a high-performance 8 Mbit (8,388,608 bit) memory organized as 1 Mbyte (1,048,576 bytes) of 8 bits each. Sixteen 64 Kbyte (65,536 byte) blocks are included on the VE28F008. A memory map is shown in Figure 4 of this specification. A block erase operation erases one

Intel

英特尔

8-MBIT (1 MBIT x 8) FLASHFILETM MEMORY

PRODUCT OVERVIEW The 28F008SA-L is a high-performance 8-Mbit (8,388,608-bit) memory organized as 1 Mbyte (1,048,576 bytes) of 8 bits each. Sixteen 64-Kbyte (65,536-byte) blocks are included on the 28F008SA-L. A memory map is shown in Figure 6 of this specification. A block erase operation erases

Intel

英特尔

M-bit (1 MB x 8) Smart 5 Flash Memories

FEATURES • Smart 5 technology – 5 V VCC – 5 V or 12 V VPP • High performance read access time LH28F008SC-V85/SCH-V85 – 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V) LH28F008SC-V12/SCH-V12 – 120 ns (5.0±0.5 V) • Enhanced automated suspend options – Byte write suspend to read – Block erase suspend

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

LH28F008SA产品属性

  • 类型

    描述

  • 型号

    LH28F008SA

  • 制造商

    SHARP

  • 制造商全称

    Sharp Electrionic Components

  • 功能描述

    4M(512K 】 8, 256K 】 16) Flash Memory

更新时间:2025-8-6 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SHARP/夏普
24+
NA/
3574
原装现货,当天可交货,原型号开票
SHARP
2016+
SOP44
5500
只做原装,假一罚十,公司可开17%增值税发票!
SHARP
23+
TSOP40
20000
全新原装假一赔十
SHARP
24+
TSOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SHP
24+/25+
6
原装正品现货库存价优
SHARP
99+
TSSOP
279
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SHARP
17+
TSSOP
9988
只做原装进口,自己库存
SHARP
1715+
SOP
251156
只做原装正品现货假一赔十!
SHARP
20+
TSOP
2960
诚信交易大量库存现货
SHA
23+
NA
120
专做原装正品,假一罚百!

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