型号 功能描述 生产厂家 企业 LOGO 操作
LGE3D10065AF

Silicon Carbide Schottky Diode

Features • Zero Forward/Reverse Recovery Current • High Blocking Voltage • High Frequency Operation • Positive Temperature Coefficient on VF • Temperature Independent Switching Behavior • Fully isolated package, 4000Vpk

LUGUANG

鲁光电子

650-V Direct WBG Diode

Key Features: •SiC performance •Easy paralleling •High current carrying capability •Very low junction capacitance •Highly stable VFand QRRat elevated temperatures

AnalogPower

Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

Cree

科锐

Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

Cree

科锐

3rd Generation 650 V, 10 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

WOLFSPEED

Silicon Carbide Schottky Diode

文件:1.09247 Mbytes Page:6 Pages

Cree

科锐

更新时间:2025-10-1 16:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
LG
2407+
TQFP48
7750
原装现货!实单直说!特价!
17+
TQFP48
6200
100%原装正品现货
LGDISPLLAY
18+
TQFP48
85600
保证进口原装可开17%增值税发票
LG
25+
NA
880000
明嘉莱只做原装正品现货
LGE
17+
TQFP48
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
LG
2010+
QFP
1700
原装现货海量库存欢迎咨询
LGE
2022+
BGA
1500
原厂代理 终端免费提供样品
LG
24+
TQFP48
60000
LG
QFP
6688
15
现货库存
LGDISPLLAY
23+
TQFP48
50000
全新原装正品现货,支持订货

LGE3D10065AF数据表相关新闻