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LF356M价格
参考价格：￥3.6921
型号：LF356M 品牌：TI 备注：这里有LF356M多少钱，2026年最近7天走势，今日出价，今日竞价，LF356M批发/采购报价，LF356M行情走势销售排行榜，LF356M报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：LF356M；LFx5x JFET Input Operational Amplifiers 1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D | TI 德州仪器 |   | ||
丝印代码：LF356M；LFx5x JFET Input Operational Amplifiers 1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D | TI 德州仪器 | | ||
丝印代码：LF356M；LFx5x JFET Input Operational Amplifiers 1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D | TI 德州仪器 | | ||
丝印代码：LF356M；LFx5x JFET Input Operational Amplifiers 1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D | TI 德州仪器 | | ||
丝印代码：LF356M；LFx5x JFET Input Operational Amplifiers 1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D | TI 德州仪器 | | ||
丝印代码：LF356M；LFx5x JFET Input Operational Amplifiers 1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D | TI 德州仪器 | | ||
丝印代码：LF356M；LFx5x JFET Input Operational Amplifiers 1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D | TI 德州仪器 | | ||
丝印代码：LF356M；LFx5x JFET Input Operational Amplifiers 1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D | TI 德州仪器 | | ||
LF356M | JFET Input Operational Amplifiers 文件：2.11476 Mbytes Page：32 Pages | TI 德州仪器 | | |
LF356M | JFET Input Operational Amplifiers 文件：2.3774 Mbytes Page：43 Pages | TI 德州仪器 | | |
LF356M | LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers 文件：2.11476 Mbytes Page：32 Pages | TI 德州仪器 | | |
LF356M | JFET Input Operational Amplifiers 文件：2.37666 Mbytes Page：43 Pages | TI 德州仪器 | | |
LF356M | JFET Input Operational Amplifiers 文件：1.07929 Mbytes Page：23 Pages | NSC 国半 | | |
LF356M | Series Monolithic JFET Input Operational Amplifiers 文件：543.17 Kbytes Page：15 Pages | NSC 国半 | | |
JFET Input Operational Amplifiers 文件：2.3774 Mbytes Page：43 Pages | TI 德州仪器 | | ||
JFET Input Operational Amplifiers 文件：2.3774 Mbytes Page：43 Pages | TI 德州仪器 | | ||
JFET Input Operational Amplifiers 文件：2.3774 Mbytes Page：43 Pages | TI 德州仪器 | | ||
JFET Input Operational Amplifier 文件：1.27538 Mbytes Page：28 Pages | TI 德州仪器 | | ||
JFET Input Operational Amplifiers 文件：2.11476 Mbytes Page：32 Pages | TI 德州仪器 | | ||
JFET Input Operational Amplifiers 文件：2.3774 Mbytes Page：43 Pages | TI 德州仪器 | | ||
LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers 文件：2.11476 Mbytes Page：32 Pages | TI 德州仪器 | | ||
JFET Input Operational Amplifiers 文件：2.37666 Mbytes Page：43 Pages | TI 德州仪器 | | ||
JFET Input Operational Amplifiers 文件：1.07929 Mbytes Page：23 Pages | NSC 国半 | | ||
JFET Input Operational Amplifiers 文件：2.3774 Mbytes Page：43 Pages | TI 德州仪器 | | ||
JFET Input Operational Amplifiers 文件：2.3774 Mbytes Page：43 Pages | TI 德州仪器 | | ||
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup | STMICROELECTRONICS 意法半导体 | | ||
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup | STMICROELECTRONICS 意法半导体 | | ||
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup | STMICROELECTRONICS 意法半导体 | | ||
SINGLE-PHASE SILICON BRIDGE RECTIFIER 文件：27.61 Kbytes Page：2 Pages | RECTRON 丽正 | | ||
SINGLE-PHASE SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 35 Amperes) 文件：27.38 Kbytes Page：2 Pages | RECTRON 丽正 | |
LF356M产品属性
- 类型
描述
- 型号
LF356M
- 功能描述
运算放大器 - 运放
- RoHS
否
- 制造商
STMicroelectronics
- 通道数量
4
- 共模抑制比（最小值）
63 dB
- 输入补偿电压
1 mV
- 输入偏流（最大值）
10 pA
- 工作电源电压
2.7 V to 5.5 V
- 安装风格
SMD/SMT
- 封装/箱体
QFN-16
- 转换速度
0.89 V/us
- 关闭
No
- 输出电流
55 mA
- 最大工作温度
+ 125 C
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
LEM |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
LEM |
24+ |
SENSOR |
8000 |
原厂原装，价格优势，欢迎洽谈！ |
|||
LEM |
17+ |
SENSOR |
60000 |
保证进口原装可开17%增值税发票 |
|||
N/A |
2450+ |
SMD |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
LEM |
23+ |
SENSOR |
600 |
正规渠道,只有原装! |
|||
25+ |
BGAQFP |
8659 |
原装公司现货!原装正品价格优势. |
||||
LFN原装 |
25+23+ |
DIP-2 |
26306 |
绝对原装正品全新进口深圳现货 |
|||
LEM |
22+23+ |
Sensor |
672 |
一切实报只做原装正品现货 |
|||
Rohm |
25+ |
10 |
公司优势库存 热卖中! |
||||
LEMUSAINC |
2407+ |
30098 |
全新原装!仓库现货,大胆开价! |
LF356M规格书下载地址
LF356M参数引脚图相关
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- LF356AH
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- LF355N
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- LF355D
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- LF353N/NOPB
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- LF353MX
- LF353M/NOPB
- LF353M
- LF353DT
- LF353DRE4
- LF353DR
- LF353DG4
- LF353D
- LF351DT
- LF351D
- LF347NE4
- LF347N/NOPB
- LF347N
- LF347MX/NOPB
LF356M数据表相关新闻
LF444CN/NOPB
LF444CN/NOPB
2023-4-28LF412CNPB
产品描述：Dual, 44-V, 4-MHz, high slew rate (15-V/μs), In to V+, JFET-input op amp
2022-4-19LF351N 运算放大器 进口原装，公司现货。
LF351N 进口原装，公司现货。
2020-11-16LFB143064-000
LFB143064-000
2020-10-19LF353N品牌TI封装DIP8
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2019-10-24LF351N公司大量原装正品现货/长期供应
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2019-5-16
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