军用级、单通道、30V、5MHz、FET 输入运算放大器

The LF356-MIL device are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage d • Advantages \n• Replace Expensive Hybrid and Module FET Op Amps\n• Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices\n• Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner\n• Offset Adjust Does Not Degrade Drift or Common-Mod;

JFET Input Operational Amplifier

文件：1.27538 Mbytes Page：28 Pages

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

SINGLE-PHASE SILICON BRIDGE RECTIFIER

文件：27.61 Kbytes Page：2 Pages

SINGLE-PHASE SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 35 Amperes)

文件：27.38 Kbytes Page：2 Pages