WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIER

DESCRIPTION These circuits are high speed J–FET input single operational amplifiers incorporating well matched, high voltage J–FET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates,low input bias and offset currents, and low offset voltage temperatur

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIER

DESCRIPTION These circuits are high speed J–FET input singleoperational amplifiers incorporating well matched, high voltage J–FET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates, low input bias and offset currents, and low offset voltage temper

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIER

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Wide bandwidth single JFET operational amplifiers

Description These circuits are high speed JFET input single operational amplifiers incorporating well matched, high voltage JFET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates, low input bias and offset currents, and low offset voltage temperature

Wide bandwidth single JFET operational amplifiers

Description These circuits are high speed JFET input single operational amplifiers incorporating well matched, high voltage JFET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates, low input bias and offset currents, and low offset voltage temperature

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIER

DESCRIPTION These circuits are high speed J–FET input single operational amplifiers incorporating well matched, high voltage J–FET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates,low input bias and offset currents, and low offset voltage temperatur

Wide bandwidth single JFET operational amplifiers

Description These circuits are high speed JFET input single operational amplifiers incorporating well matched, high voltage JFET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates, low input bias and offset currents, and low offset voltage temperature

GABINETE S ALMENDRA 143x83x38mm CON PORTAPILA 9V CON UNA CARA LISA

Descripción Es un gabinete electrónico de escritorio, fabricado en dos piezas con plástico ABS moldeado por inyección, en conformidad a las normas RoHS y UL94HB, que garantizan la calidad del producto en materia de inflamabilidad y cuidado al medio ambiente. Tiene en su interior un compartimient

GABINETE S GRIS 143x83x38mm CON PORTAPILA 9V CON UNA CARA LISA

Descripción Es un gabinete electrónico de escritorio, fabricado en dos piezas con plástico ABS.Tiene en su interior un compartimiento donde se puede colocar una batería de 9V. Aplicaciones Este gabinete puede ser utilizado para guardar componentes electrónicos,proteger diseños de PCB o para e

Axial Lead & Cartridge Fuses

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Long life, 9mm diameter, composition element, variable resistor

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Premier Supplier of Electronic Hardware

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