Quad SPST JFET Analog Switches

General Description These devices are a monolithic combination of bipolar and JFET technology producing the industry’s first one chip quad JFET switch. A unique circuit technique is employed to main tain a constant resistance over the analog voltage range of ±10V. The input is designed to opera

Quad SPST JFET Analog Switches

General Description These devices are a monolithic combination of bipolar and JFET technology producing the industry’s first one chip quad JFET switch. A unique circuit technique is employed to main tain a constant resistance over the analog voltage range of ±10V. The input is designed to opera

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) • High Switching Speed APPLICATIONS • Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. T

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus) = 350V(Min) • High Switching Speed APPLICATIONS • Designed for high-voltage .high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. T

SWITCHMODE SERIES NPN SILICON TRANSISTORS

SWITCHMODE SERIES NPN SILICON TRANSISTORS …designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical , They are particularly suited for line operated switchmode applications such as: * Switching Regulators * Inverters * Solenoid and relay drivers