45W 28V 1.6GHz LDMOS TRANSISTOR

The LET16045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz. The LET16045C is designed for high gain and broadband performance operating in common source mode at 28 V. • Excellent thermal stability\n• Common source configuration\n• POUT (@28 V) = 45 W with 14.5 dB gain @ 1600 MHz• BeO free package\n• In compliance with the 2002/95/EC European directive;

Excellent thermal stability

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封装/外壳：M243 包装：托盘 描述：FET RF 80V 1.6GHZ M243 分立半导体产品 晶体管 - FET，MOSFET - 射频

Schottky PowerMod

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160 Amp Rectifier 20 to 100 Volts Schottky Barrier

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NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange. FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structur

2 X 160A SCHOTTKY BARRIER RECTIFIER

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POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual power Schottky rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in ISOTOP, this device is especially in tended for use in low voltage, high frequency in verters, free wheeling and polarity protection applications. FEATURES