NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange. FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structur

NPN microwave power transistor

160 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability

Schottky PowerMod

Schottky Powermod ● Schottky Barrier Rectifier ● Guard Ring for Reverse Protection ● VRRM - 35 to 50 Volts ● High Surge Capacity ● Reverse Energy Tested

2 X 160A SCHOTTKY BARRIER RECTIFIER

2 X 160A Schottky Barrier Rectifier ● 2500V isolation - Terminals to Base ● Low Forward Voltage Drop ● 2 Schottky Rectifiers in one pkg. ● 35-45V @ 160A/leg ● Low Switching losses

POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual power Schottky rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in ISOTOP, this device is especially in tended for use in low voltage, high frequency in verters, free wheeling and polarity protection applications. FEATURES