ULTRA LOW DROP-LOW NOISE BICMOS 300mA V.REG. FOR USE WITH VERY LOW ESR OUTPUT CAPACITOR

DESCRIPTION The LDS3985 provides up to 300mA, from 2.5V to 6V input voltage. It is stable with ceramic and high quality tantalum capacitor. The ultra low drop-voltage, low quiescent current and low noise makes it suitable for low power applications and in battery powered systems. Regulator ground

Ultra low drop-low noise BiCMOS 300 mA voltage regulator for use with very low ESR output capacitor

Description The LDS3985xx provides up to 300 mA, from 2.5 V to 6 V input voltage. It is stable with ceramic and high quality tantalum capacitor. The ultra low drop voltage, low quiescent current and low noise makes it suitable for low power applications and in battery powered systems. Regulator g

封装/外壳：SC-74A，SOT-753 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG LINEAR 3.3V 300MA SOT23-5 集成电路（IC） 线性 + 开关稳压器

封装/外壳：SC-74A，SOT-753 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG LINEAR 3.3V 300MA SOT23-5 集成电路（IC） 稳压器 - 线性

ULTRA LOW DROP-LOW NOISE BICMOS VOLTAGE REGULATORS LOW ESR CAPACITORS COMPATIBLE

DESCRIPTION The LD3985 provides up to 150mA, from 2.5V to 6V input voltage. The ultra low drop-voltage, low quiescent current and low noise make it suitable for low power applications and in battery powered systems. Regulator ground current increases only slightly in dropout, further prolonging t

3-phase inverter based on STSPIN32F0251

Features • Input voltage 什om 20 V to 120 V DC/AC • STD17NF25 MOSFETs power stage featuring: - VDS = 250 V - Ros(on)max.= 0.165 Q • Overcurrent threshold set to 16 Apeak • Dual footprint for IGBT/MOSFET package: 一 DPAK - PowerFlat 6x5 • Single-shunt current sensing, suitable for: - Sensor

Ultra low drop-low noise BiCMOS voltage regulators low ESR capacitors compatible

Description The LD3985xx provides up to 150 mA, from 2.5 V to 6 V input voltage. The ultra low drop-voltage, low quiescent current and low noise make it suitable for low power applications and in battery powered systems. Regulator ground current increases only slightly in dropout, further prolo