丝印代码：LDH543A；16-BIT REGISTERED TRANSCEIVER WITH 3-STATE OUTPUTS

FEATURES · Member of the Texas Instruments Widebus™ Family · Operates From 1.65 V to 3.6 V · Inputs Accept Voltages to 5.5 V · Max tpd of 5.4 ns at 3.3 V · Typical VOLP (Output Ground Bounce) 2 V at VCC = 3.3 V, TA

丝印代码：LDH543A；16-BIT REGISTERED TRANSCEIVER WITH 3-STATE OUTPUTS

FEATURES · Member of the Texas Instruments Widebus™ Family · Operates From 1.65 V to 3.6 V · Inputs Accept Voltages to 5.5 V · Max tpd of 5.4 ns at 3.3 V · Typical VOLP (Output Ground Bounce) 2 V at VCC = 3.3 V, TA

丝印代码：LDH543A；16-BIT REGISTERED TRANSCEIVER WITH 3-STATE OUTPUTS

FEATURES · Member of the Texas Instruments Widebus™ Family · Operates From 1.65 V to 3.6 V · Inputs Accept Voltages to 5.5 V · Max tpd of 5.4 ns at 3.3 V · Typical VOLP (Output Ground Bounce) 2 V at VCC = 3.3 V, TA

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

UHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange. The devices a