GaAs infrared emitting diode

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GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays

Features ● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ● High reliability ● Same package as BPX 80 series Applications ● Miniature photointerrupters ● Punched tape-readers ● Industrial electronics ● For control and drive circuits

Silicon NPN Transistor High Gain Darlington Power Amp, Switch

Features: • Forward Current Transfer Ratio: hFE = 90,000 min. • Free–Air Power Dissipation: 1.33W @ TA = +50°C • Hard Solder Mountdown Applications: • Driver • Regulator • Audio Output • Relay Substitute • Touch Switch • Oscillator • IC Driver • Servo Amplifie

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

Enhanced, Energy Efficient, Low Power Off-line Switcher

Description TinySwitch-II integrates a 700 V power MOSFET, oscillator, high voltage switched current source, current limit and thermal shutdown circuitry onto a monolithic device. The start-up and operating power are derived directly from the voltage on the DRAIN pin, eliminating the need for a b

Enhanced, Energy Efficient, Low Power Off-line Switcher

Description TinySwitch-II integrates a 700 V power MOSFET, oscillator, high voltage switched current source, current limit and thermal shutdown circuitry onto a monolithic device. The start-up and operating power are derived directly from the voltage on the DRAIN pin, eliminating the need for a b