位置：首页 > IC中文资料第10687页 > LBT83003
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
LBT83003 | 830MHz SAW Filter 12MHz Bandwidth 文件：185.65 Kbytes Page：3 Pages | SIPAT 胜普电子 |   | |
LBT83003 | 830MHz SAW Filter 12MHz Bandwidth 文件：185.65 Kbytes Page：3 Pages | SIPAT 胜普电子 | | |
LBT83003 | 射频声表面波滤波器 | SIPAT 胜普电子 | | |
High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STN83003 is expres | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The ST83003 is exp | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STD83003 is exp | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STN83003 is expres | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STX83003 is ex | STMICROELECTRONICS 意法半导体 | |
LBT83003产品属性
- 类型
描述
- 型号
LBT83003
- 制造商
SIPAT
- 制造商全称
SIPAT
- 功能描述
830MHz SAW Filter 12MHz Bandwidth
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
JST |
2026+ |
N/A |
54000 |
专注连接器,连接一切可能 |
|||
MURATA |
20+ |
SMD |
1496 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MURATA |
23+ |
SMD |
50000 |
只做原装正品 |
|||
JST |
25+ |
1500 |
全新原装正品鄙视假货15118075546 |
||||
SIPAT |
23+ |
SMD-6P |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
JST |
22+ |
NA |
25000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
SIPAT |
2450+ |
SMD |
9850 |
只做原装正品现货或订货假一赔十! |
|||
SIPAT |
25+ |
SMD |
15000 |
一级代理原装现货 |
|||
LRC |
25+23+ |
SOT-23 |
27546 |
绝对原装正品全新进口深圳现货 |
|||
JST/日压 |
2508+ |
/ |
470984 |
一级代理，原装现货 |
LBT83003规格书下载地址
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DdatasheetPDF页码索引
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