DUAL POLE OptoMOS Relay

Description LBB126 is a 250V, 170mA, 15Ω 2-Form-B relay. It features lower on-resistance combined with enhanced peak load current handling capability. Features • Small 8 Pin DIP Package • Low Drive Power Requirements (TTL/CMOS Compatible) • No Moving Parts • High Reliability • Arc-Free With

Dual Single-Pole, Normally Closed OptoMOS Relay

Description LBB126 is a dual 250V, 170mA, 15Ω, normally closed (1-Form-B) relay that features low on-resistance combined with enhanced peak load current handling capability. It is provided in an 8-pin package, and employs optically coupled MOSFET technology to provide 3750Vrms of input to output

封装/外壳：8-SMD（0.300"，7.62mm） 包装：卷带（TR） 描述：SSR RELAY SPST-NC 170MA 0-250V 继电器 固态继电器

封装/外壳：8-SMD（0.300"，7.62mm） 包装：管件 描述：SSR RELAY SPST-NC 170MA 0-250V 继电器 固态继电器

Dual Single-Pole, Normally Closed OptoMOS Relay

Description LBB126 is a dual 250V, 170mA, 15Ω, normally closed (1-Form-B) relay that features low on-resistance combined with enhanced peak load current handling capability. It is provided in an 8-pin package, and employs optically coupled MOSFET technology to provide 3750Vrms of input to output

DUAL POLE OptoMOS Relay

Description LBB126 is a 250V, 170mA, 15Ω 2-Form-B relay. It features lower on-resistance combined with enhanced peak load current handling capability. Features • Small 8 Pin DIP Package • Low Drive Power Requirements (TTL/CMOS Compatible) • No Moving Parts • High Reliability • Arc-Free With

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switc

Germanium Mesa Transistor, PNP, for High-Speed Switching Applications

Germanium Mesa Transistor, PNP, for High–Speed Switching Applications

POWER TRANSISTORS(5.0A,60-100V,65W)

designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon NPN Phototransistor

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