SCHOTTKY BARRIER DIODE

● Features Extremely Low Forward Voltage 0.3 V (max) @ IF = 10 mA S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ● Construction Silicon epitaxial planar ● We declare that the material

肖特基二极管

SCHOTTKY BARRIER DIODE

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General Purpose Transistors

General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available

General Purpose Transistors

General Purpose Transistors PNP Silicon

General Purpose Transistors(PNP Silicon)

General Purpose Transistors PNP Silicon

General Purpose Transistors(PNP Silicon)

General Purpose Transistors PNP Silicon

General Purpose Transistors

General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available