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型号 功能描述 生产厂家 企业 LOGO 操作
LBA126S

DUAL POLE OptoMOS Relay

Description LBA126 is 250V, 170mA, 15Ω independent 1-Form-A and 1-Form-B relays. It features lower on-resistance with enhanced peak load current handling capabilities. Features • Small 8 Pin DIP Package • Low Drive Power Requirements (TTL/CMOS Compatible) • No Moving Parts • High Reliability

CLARE

Clare, Inc.

LBA126S

Dual Single-Pole OptoMOS Relay

文件:152 Kbytes Page:9 Pages

IXYS

艾赛斯

LBA126S

封装/外壳:8-SMD(0.300",7.62mm) 包装:管件 描述:RELAY SPST-NO/NC 170MA 0-250V 继电器 固态继电器

ETC

知名厂家

LBA126S

封装/外壳:8-SMD(0.300",7.62mm) 包装:管件 描述:RELAY SPST-NO/NC 170MA 0-250V 继电器 固态继电器

ETC

知名厂家

DUAL POLE OptoMOS Relay

Description LBA126 is 250V, 170mA, 15Ω independent 1-Form-A and 1-Form-B relays. It features lower on-resistance with enhanced peak load current handling capabilities. Features • Small 8 Pin DIP Package • Low Drive Power Requirements (TTL/CMOS Compatible) • No Moving Parts • High Reliability

CLARE

Clare, Inc.

Dual Single-Pole OptoMOS Relay

文件:152 Kbytes Page:9 Pages

IXYS

艾赛斯

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switc

PHILIPS

飞利浦

Germanium Mesa Transistor, PNP, for High-Speed Switching Applications

Germanium Mesa Transistor, PNP, for High–Speed Switching Applications

NTE

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

MOSPEC

统懋

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

MOTOROLA

摩托罗拉

Silicon NPN Phototransistor

文件:45.28 Kbytes Page:2 Pages

PANASONIC

松下

LBA126S产品属性

  • 类型

    描述

  • 型号

    LBA126S

  • 功能描述

    固态继电器-PCB安装 Dual Pole

  • RoHS

  • 制造商

    Omron Electronics

  • 负载电压额定值

    40 V

  • 负载电流额定值

    120 mA

  • 触点形式

    1 Form A(SPST-NO)

  • 输出设备

    MOSFET

  • 封装/箱体

    USOP-4

  • 安装风格

    SMD/SMT

更新时间:2026-5-19 20:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CPCLAER
19+
SOP8
902
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CLARE
25+
DIP8-SOP8
19335
全新原装正品支持含税
CPCLAER
22+
SOP8
20000
只做原装 品质保障
CPCLAER
23+
SOP8
8560
受权代理!全新原装现货特价热卖!
CPCLARE
24+
40000
CPCLAER
23+
SOP8
902
全新原装正品现货,支持订货
CLARE
23+
DIP8-SOP8
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
26+
N/A
57000
一级代理-主营优势-实惠价格-不悔选择
CPCLAER
23+
SOP-8
50000
全新原装正品现货,支持订货
CLARE
04+
SOP
2000

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