High-voltage resonant controller

Device description The L6599 is a double-ended controller specific for the resonant half-bridge topology. It provides 50 complementary duty cycle: the high-side switch and the low-side switch are driven ON 180° out-of-phase for exactly the same time. Output voltage regulation is obtained by modu

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER)

HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION.

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

NPN Silicon RF Transistor (Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion)

NPN Silicon RF Transistor ● Common emitter IF/RF amplifier ● Low feedback capacitance due to shield diffusion

Thermal paper roll

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5MM LED

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