5.8W typ AF Power Amplifier for Car Stereos, Car Radios

Features • High gain (53dB typ.) and high output (5.8W typ). • Soft clip. • Small number of external parts (4 pcs). • Bridge construction usable (PO=18W/RL=4Ω). • Built-in thermal shutdown circuit against load short, overload. • Built-in circuit to prevent pop noise at the time of power supp

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4422 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the sour

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4422A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the sou

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4422A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the sou

N-Channel 20-V (D-S) MOSFET

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