for car body applications

Description The L5958 includes 6 linear voltage regulators and a 2 A power switch, working down to 4.5 V battery level. All the voltage regulators can be switched off through the three enable pins. Features ■ L5958 six outputs: – 8.5 V @ 200 mA – 5.0 V @ 300 mA – 3.3 V @ 250 mA

车门致动器驱动器

The L9953LXP is a microcontroller driven multifunctional door actuator driver for automotive applications. Up to three DC motors and three grounded resistive loads can be driven with five half bridges and three highside drivers. The integrated standard serial peripheral interface (SPI) controls all • Open-load diagnostic for all outputs \n• All outputs over temperature protected \n• Separated half bridges for door lock motor \n• Overload diagnostic for all outputs \n• Charge pump output for reverse polarity protection \n• PWM control of all outputs \n• All outputs short circuit protected• Very;

封装/外壳：PowerSSO-36 裸露底部焊盘 包装：卷带（TR） 描述：IC DVR DOOR ACTUATOR POWERSSO36 集成电路（IC） 电源管理 - 专用

Door actuator driver

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封装/外壳：PowerSSO-36 裸露底部焊盘 包装：卷带（TR） 描述：IC DVR DOOR ACTUATOR POWERSSO36 集成电路（IC） 电源管理 - 专用

Dual P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -2.9A, RDS(ON) = 100mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package.

Dual P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -2.9A, RDS(ON) = 100mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package.

Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wit

Dual P-Channel 20-V (D-S) MOSFET

Dual P-Channel 20-V (D-S) MOSFET