丝印代码：L9945；Automotive fully configurable 8-channel High/Low side MOSFET pre-driver suitable for 12 V and 24 V systems

Features • AEC-Q100 qualified • 12 V and 24 V battery systems compliance • 3.3 V and 5 V logic compatible I/O • 8-channel configurable MOSFET pre-driver – High-side (N-channel and P-channel MOS) – Low-side (N-channel MOS) – H-bridge (up to 2 H-bridge) – Peak & Hold (2 loads) • Operating b

丝印代码：L9945；Automotive fully configurable 8-channel High/Low side MOSFET pre-driver suitable for 12 V and 24 V systems

Features • AEC-Q100 qualified • 12 V and 24 V battery systems compliance • 3.3 V and 5 V logic compatible I/O • 8-channel configurable MOSFET pre-driver – High-side (N-channel and P-channel MOS) – Low-side (N-channel MOS) – H-bridge (up to 2 H-bridge) – Peak & Hold (2 loads) • Operating b

Automotive fully configurable 8-channel High/Low side MOSFET pre-driver suitable for 12 V and 24 V systems

Features • AEC-Q100 qualified • 12 V and 24 V battery systems compliance • 3.3 V and 5 V logic compatible I/O • 8-channel configurable MOSFET pre-driver – High-side (N-channel and P-channel MOS) – Low-side (N-channel MOS) – H-bridge (up to 2 H-bridge) – Peak & Hold (2 loads) • Operating b

封装/外壳：64-TQFP 裸露焊盘 包装：卷带（TR） 描述：IC PTS SMART POWER 集成电路（IC） 电源管理 - 专用

汽车级完全可配置8通道高/低侧MOSFET

Automotive fully configurable 8-channel High/Low side MOSFET pre-driver suitable for 12 V and 24 V systems

Features • AEC-Q100 qualified • 12 V and 24 V battery systems compliance • 3.3 V and 5 V logic compatible I/O • 8-channel configurable MOSFET pre-driver – High-side (N-channel and P-channel MOS) – Low-side (N-channel MOS) – H-bridge (up to 2 H-bridge) – Peak & Hold (2 loads) • Operating b

Automotive fully configurable 8-channel High/Low side MOSFET pre-driver suitable for 12 V and 24 V systems

Features • AEC-Q100 qualified • 12 V and 24 V battery systems compliance • 3.3 V and 5 V logic compatible I/O • 8-channel configurable MOSFET pre-driver – High-side (N-channel and P-channel MOS) – Low-side (N-channel MOS) – H-bridge (up to 2 H-bridge) – Peak & Hold (2 loads) • Operating b

封装/外壳：64-TQFP 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PTS SMART POWER 集成电路（IC） 电源管理 - 专用

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 3.3A, RDS(ON) = 100mΩ @VGS = 10V. RDS(ON) = 200mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface Mount Package.

1/6 Inch Optical Size CCIR Black-and-White Solid-State Imaging Device

Overview The LC9945 is a 1/6 inch optical size frame transfer CCD (Charge-coupled device) solid-state imaging device.

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These

Dual N-Channel 60-V (D-S), 175C MOSFET

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Dual N-Channel Enhancement Mode MOSFET

文件：242.04 Kbytes Page：3 Pages