位置:首页 > IC中文资料 > L441

型号 功能描述 生产厂家 企业 LOGO 操作

Thyratrons For Industrial, Medical & ScientificApplications

Stellant Thyratrons power an almost endless range of industrial applications. From food processing, agricultural production and mining to plastic recycling and diamond seeding, the technology is revolutionary. Everyday a patient is treated for cancer using Stellant’s technology. Our thyratrons are f

Stellant

Leading the Industry in High-Performance System Test

HP

安捷伦

Leading the Industry in High-Performance System Test

文件:249.84 Kbytes Page:7 Pages

HP

安捷伦

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor . . . for amplifier and switching applications. Complementary types are BD438 and BD442.

MOTOROLA

摩托罗拉

Phase Control SCR 750 Amperes Average 2400 Volts

Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, Hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ He

POWEREX

LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS

Low Power JFET Input Operational Amplifiers These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products

ONSEMI

安森美半导体

LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS

Low Power JFET Input Operational Amplifiers These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products

ONSEMI

安森美半导体

LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS

Low Power JFET Input Operational Amplifiers These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products

ONSEMI

安森美半导体

L441产品属性

  • 类型

    描述

  • Tube Diameter (in):

    3

  • Typical Weights:

    2 lb 10 oz

  • Outline Drawing (typ):

    Figure 10

  • Peak Anode Voltage (kV):

    35

  • Peak Anode Current (A):

    10

  • Avg. Anode Current (ADC):

    2.0

  • Cathode Heater (V/A):

    6.3/19

  • Reservoir Heater (V/A):

    6.3/2.5

  • Application:

    Excimer laser

更新时间:2026-5-16 17:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
A
24+
DIP-8
6
AGERE
25+
BGA
880000
明嘉莱只做原装正品现货
AGERE
25+23+
BGA
26389
绝对原装正品全新进口深圳现货
NS
25+
MSOP8
4500
全新原装、诚信经营、公司现货销售!
NS
23+
MSOP8
3600
绝对全新原装!现货!特价!请放心订购!
LASORB
2450+
DIP2
6540
只做原厂原装正品终端客户免费申请样品
NS
26+
MSOP8
9823
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ST
26+
SOP-28
890000
一级总代理商原厂原装大批量现货 一站式服务
ST
2511
SOP-28
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
INTEL
22+
BGA
5000
原装现货库存.价格优势!!

L441数据表相关新闻

  • L3级自动驾驶即将全面商用,众车企蓄势待发

    L3级自动驾驶即将全面商用,众车企蓄势待发

    2025-1-21
  • L3GD20HTR 运动传感器芯片 丝印3GDH三轴数字陀螺仪 LGA16全新原装

    L3GD20HTR

    2022-5-13
  • L4931CD33-TRY全新原装现货

    L4931CD33-TRY,全新原装现货0755-82732291当天发货或门市自取.

    2020-12-19
  • L432-1.24V低电压可调节精密并联稳压器

    概述 该L432是三端可调分流稳压器利用一个精确的1.24V带隙参考。输出电压可设置为任何至1.24V电压(VREF)值二至18V外部电阻所示的典型应用电路。该设备展宽工作电流范围为0.2至100妈典型的动态阻抗0.25Ω。主动输出电路提供了一个非常尖锐的开启特性,使得L432优良替代品低压齐纳二极管许多应用,包括板上调节可调电源。当与光耦合器使用,L432是理想的电压基准,个别反馈电路为3.3V开关式电源。并联稳压器的L432是两个可用(0.5%和1.0%)和三个电压公差封装选择(的TO -92,采用SOT-23 - 3和SO- 8)。 特征

    2013-3-22
  • L4946B-QUAD与抑制和复位电压稳压器

    特点 4输出:10V(125毫安);8.5V(250毫安);5V(200毫安);5V(100毫安) 10V和5V(百毫安)输出低压差 5V(100毫安)ST- BY输出电压 为欠压预警输出(LVW) 热停机和电流限制(折返) 反向电池及负载突降保护 INHIBIT(ON/ OFF)和复位功能 说明 该L4946B是一款四输出低压降电压稳压器。四是输出10V的低压降125毫安(VO1),在250毫安(VO2)8.5V,在5V最大200mA(VO3)和低ST -一行在下降

    2013-1-23
  • L4940-非常低的压差1.5 A调节剂

    特点 精密5 V,8.5 V,10 V,12 V输出 LOWDROPOUT电压(500 mV典型值在1.5A) VERYLOW QUIESCENTCURRENT 热关断 短路保护 REVERSEPOLARITY保护 说明 该三端积极L4940系列监管机构在TO -220和D2PAK可用包和几个固定的输出电压,使得在工业和多种有用消费应用。由于其非常低输入/输出电压下降,这些设备特别适合电池供电设备,降低消耗和延长电池寿命。每种类型员工内部电流限制,抗饱和电

    2013-1-23