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650-V Direct WBG Diode

Key Features: •SiC performance •Easy paralleling •High current carrying capability •Very low junction capacitance •Highly stable VFand QRRat elevated temperatures

AnalogPower

3rd Generation 650 V, 10 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

WOLFSPEED

Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

Cree

科锐

Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

Cree

科锐

Silicon Carbide Schottky Diode

文件:1.09247 Mbytes Page:6 Pages

Cree

科锐

更新时间:2025-10-26 23:00:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CREE
24+
NA/
2741
优势代理渠道,原装正品,可全系列订货开增值税票
CREE/科锐
25+
TO-220
18
原装正品,假一罚十!
TDK
24+
SOD723
10000
公司现货库存,支持实单
CREE
24+
TO220-2
2741
只做原厂渠道 可追溯货源
CREE/科锐
2450+
TO220-2
9850
只做原装正品现货或订货假一赔十!
CREE/科锐
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
CREE
23+
TO220-2
7000
CREE/科锐
16+
TO220-2
2950
原装现货
Wolfspeed
24+
NA
3000
进口原装正品优势供应
CreeInc
22+
TO220-2
6000
十年配单,只做原装

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