丝印代码：L226B；LP5996 Dual Linear Regulator with 300mA and 150mA Outputs

1FEATURES 2• 2 LDO Outputs with Independent Enable • 1.5% Accuracy at Room Temperature, 3% over Temperature • Thermal Shutdown Protection • Stable with Ceramic Capacitors APPLICATIONS • Cellular Handsets • PDA's • Wireless Network Adaptors KEY SPECIFICATIONS • Input Voltage

丝印代码：L226B；LP5996 Dual Linear Regulator with 300mA and 150mA Outputs

1FEATURES 2• 2 LDO Outputs with Independent Enable • 1.5% Accuracy at Room Temperature, 3% over Temperature • Thermal Shutdown Protection • Stable with Ceramic Capacitors APPLICATIONS • Cellular Handsets • PDA's • Wireless Network Adaptors KEY SPECIFICATIONS • Input Voltage

丝印代码：L226B；LP5996 Dual Linear Regulator with 300mA and 150mA Outputs

1FEATURES 2• 2 LDO Outputs with Independent Enable • 1.5% Accuracy at Room Temperature, 3% over Temperature • Thermal Shutdown Protection • Stable with Ceramic Capacitors APPLICATIONS • Cellular Handsets • PDA's • Wireless Network Adaptors KEY SPECIFICATIONS • Input Voltage

丝印代码：L226B；LP5996 Dual Linear Regulator with 300mA and 150mA Outputs

1FEATURES 2• 2 LDO Outputs with Independent Enable • 1.5% Accuracy at Room Temperature, 3% over Temperature • Thermal Shutdown Protection • Stable with Ceramic Capacitors APPLICATIONS • Cellular Handsets • PDA's • Wireless Network Adaptors KEY SPECIFICATIONS • Input Voltage

L2263 Current Mode PWM Controller

Description  Leading edge Blanking on current sense input.  Internal synchronized slope compensation  Extended burst mode control for improved efficiency and minimum standby power design  Low VDD startup current and low operating current.  Gate output maximum voltage clamp  Cycle-b

L2269 Current Mode PWM Controller

Description Leading edge Blanking on current sense input. Internal synchronized slope compensation Extended burst mode control for improved efficiency and minimum standby power design Low VDD startup current and low operating current. Gate output maximum voltage clamp 18V. Cycle-by

开关电源控制器集成电路

NPN video transistor

DESCRIPTION NPN silicon transistor encapsulated in a 4-lead plastic SOT223 package. APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors.

Germanium PNP Transistor Audio Power Amp

Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high–power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . 35V Collector–Emitter Voltage (RB

SILICON TRIACS

Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)

SILICON TRIACS

Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)

SILICON TRIACS

Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)