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IRFR4104PBF中文资料
IRFR4104PBF数据手册规格书PDF详情
AUTOMOTIVE MOSFET
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
IRFR4104PBF产品属性
- 类型
描述
- 型号
IRFR4104PBF
- 功能描述
MOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
19+ |
TO-252 |
12000 |
||||
IR |
21+ |
TO-252 |
20000 |
原装现货假一罚十 |
|||
INFINEON/英飞凌 |
21+ |
NA |
12500 |
只做全新原装公司现货特价 |
|||
IR |
16+/17+ |
TO-252 |
3500 |
原装正品现货供应56 |
|||
IR |
24+ |
TO-252 |
292 |
只做原厂渠道 可追溯货源 |
|||
INFINEON/IR |
11+ |
1275 |
PG-TO252-3 (DPAK) |
||||
IR |
2021+ |
TO-252 |
9000 |
原装现货,随时欢迎询价 |
|||
Infineon(英飞凌) |
24+ |
TO-252 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
13+ |
TO-252 |
292 |
深圳原装进口无铅现货 |
IRFR4104PBF 价格
参考价格：￥3.3989
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