Low-Cost-Hyperabrupt-Varactor

GaAs hyperabrupt junction varactor diodes are fabricated from epitaxial layers grown by the Chemical Vapor Deposition technique.The layers are processed using proprietary techniques resulting in varactors with constant gamma, high Q and repeatable tuning curves.These varactors are available in a var High Q Vales for Higher Frequency Performance\nLow Reverse Current\nGamma Values to 1.5\nAvailable as Bondable Chips and as Packaged Diodes\nAvailable in Chip-on-Board Packaging\nCustom Designs Available;

封装/外壳：DO-204AG，DO-34，轴向 包装：托盘 描述：SI TVAR NON HERMETIC CHIP 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

DC/DC Converter Applications

Features • Adoption of FBET and MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall-sized package permitting applied sets to be made small and slim. • High allowable power dissipation. Applications • Relay drivers,

RX Gain Control Amplifier

Description CXA3201N is an RX gain control amplifier suitable for CDMA cellular/PCS phone. Features • Wide gain control range • Linear gain slope • Wideband operation (50MHz to 300MHz) • Very small package (16 Pin SSOP) • Low voltage operation • Two input ports • Power save function inclu

PowerMOS transistor TOPFET high side switch

DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic package. FEATURES ● Vertical power TrenchMOS ● Low on-state resistance ● CMOS logic compatible ● Very low quiescent current ● Overtemperature protection ● Load current

Switching Type Regulator

文件：29.79 Kbytes Page：2 Pages

UHF/VHF remote control receiver

文件：162.82 Kbytes Page：20 Pages