N-ch Trench MOS FET

General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATU

N-ch Trench MOS FET

100 V N-Channel MOSFET

• Fast switching speed • Low gate charge, QG=54 nC (typical) • High performance channel technology can achieve very low RDS(on). • High power and high current handling capacity • Meet RoHS standards •VDS=100V •ID(at VGS=10V)=100A •RDS(ON) (at VGS=10V)

OptiMOSTM3 Power-Transistor, 100 V

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccor

OptiMOSTM3 Power-Transistor

VDS 100 V RDS(on),max 4.5 mW ID 64 A Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal

N-Channel PowerTrench짰 MOSFET 100 V, 164 A, 4.5 m廓

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N-Channel PowerTrench짰 MOSFET 100V, 164A, 4.5m

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