EPITAXIAL PLANAR PNP TRANSISTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR

POWER MANAGEMENT. FEATURES • Including two devices in US6. (Ultra Super mini type with 6 leads) • Simplify circuit design. • Reduce a quantity of parts and manufacturing process.

US6 General Purpose Transistor PNP_N_CH -12V -0.5A 0.15W

. Including Two Devices in US6.\n  (Ultra Super Mini Type with 6 Leads). Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process;

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts Power Gain = 12 dB Min Efficiency = 50 Min • 100

COPS Family Users Guide Table of Contents

文件：8.5059 Mbytes Page：79 Pages

Low Power Single Op Amp

文件：237.25 Kbytes Page：9 Pages

Low Power Single Op Amp

文件：237.25 Kbytes Page：9 Pages

Low Power Single Op Amp

文件：237.25 Kbytes Page：9 Pages