NPN EPITAXIAL PLANAR TRANSISTOR

NPN EPITAXIAL PLANAR TRANSISTOR Pb Lead(Pb)-Free

丝印代码：UO/UV；NPN Silicon Epitaxial Planar Transistor

FEATURES ● High speed switching time. ● Low saturation voltage:VCE(sat)=0.5V(Max). ● PC=1~2W(Mounted on ceramic substrate). ● Small flat package. ● Complementary: KTA1666. APPLICATIONS ● Power amplifier application. ● Power switching application.

TRANSISTOR (NPN)

FEATURES ● Low saturation voltage ● High speed switching time ● Complementary to KTA1666

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low saturation voltage ● High speed switching time ● Complementary to KTA1666

EPITAXIAL PLANAR NPN TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)

POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES • Low Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=1A) • High Speed Switching Time : tstg=1.0μS(Typ.) • PC=1 ~ 2W (Mounted on Ceramic Substrate) • Small Flat Package. • Complementary to KTA1666.

NPN Transistors

■ Features ● Low saturation voltage ● High speed switching time ● Complementary to KTA1666

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low saturation voltage High speed switching time Complementary to KTA1666

Silicon NPN transistor in a SOT-89 Plastic Package

Descriptions Silicon NPN transistor in a SOT-89 Plastic Package. Features Low saturation voltage, high speed switching time, small flat package Complementary to KTA1666. Applications Power amplifier and switching applications.

Plastic-Encapsulate Transistors

FEATURES • Low saturation voltage • High speed switching time • Complementary to KTA1666

普通三极管

50V,2A,General Purpose NPN Bipolar Transistor

NPN Silicon Epitaxial Planar Transistor

丝印代码：UO；NPN Transistors

■ Features ● Low saturation voltage ● High speed switching time ● Complementary to KTA1666

丝印代码：UY；NPN Transistors

■ Features ● Low saturation voltage ● High speed switching time ● Complementary to KTA1666

EPITAXIAL PLANAR NPN TRANSISTOR

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NPN Transistors

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