EPITAXIAL PLANAR NPN TRANSISTOR (LOW NOISE AMPLIFIER)

LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : VCEO=120V. • Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). • High hFE: hFE=200∼700. • Low Noise : NF=1dB(Typ.), 10dB(Max.). • Complementary to KTA2017.

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High DC Current Gain ● Complementary to KTA2017 ● High Voltage ● Excellent hFE Linearity ● Low Noise APPLICATIONS ● General Purpose Amplification

SOT-323 Plastic-Encapsulate Transistors

FEATURES High DC Current Gain Complementary to KTA2017 High Voltage Excellent hFE Linearity Low Noise APPLICATIONS General Purpose Amplification

EPITAXIAL PLANAR NPN TRANSISTOR

文件：42.33 Kbytes Page：2 Pages

Transistor

双晶体管

Low Noise Transistor, USM, 120V, 0.1A

EPITAXIAL PLANAR NPN TRANSISTOR

文件：42.33 Kbytes Page：2 Pages

EPITAXIAL PLANAR NPN TRANSISTOR

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