EPITAXIAL PLANAR NPN TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)

POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES • Low Collector Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=1A) • High Speed Switching Time : tstg=1.0μS(Typ.) • Complementary to KTA1281.

Silicon NPN transistor in a TO-92LM Plastic Package.

Descriptions Silicon NPN transistor in a TO-92LM Plastic Package. Features Low saturation voltage, high speed switching time, complementary to KTA1281. Applications Power amplifier and switching applications.

Switching Transistor, TO-92L, 50V, 2A

• Low Saturation Voltage \n• High Speed Switching Time;

双极晶体管

EPITAXIAL PLANAR NPN TRANSISTOR

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EPITAXIAL PLANAR NPN TRANSISTOR

文件：903.4 Kbytes Page：3 Pages

EPITAXIAL PLANAR NPN TRANSISTOR

文件：903.4 Kbytes Page：3 Pages

NPN Transistors

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NPN Transistors

文件：1.44394 Mbytes Page：3 Pages

NPN Transistors

文件：1.44394 Mbytes Page：3 Pages

MICROPOWER, ULTRA-SENSITIVE HALL-EFFECT SWITCHES

MICROPOWER, ULTRA-SENSITIVE HALL-EFFECT SWITCHES The A3209Ex and A3210Ex integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in battery-operated, hand-held equipment such as cellular and cordles

DC/DC Converter Applications

DC/DC Converter Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). • High allowable power dissipat

NPN Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=4.7KΩ) • Complement to FJNS4209R

DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm). • High allowable power dissip

TOPFET high side switch

DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package. FEATURES ● Vertical power TrenchMOS ● Low on-state resistance ● CMOS logic compatible ● Very low quiescent current ● Overtemperature protection ●