EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • High DC Current Gain : hFE=600 3600.

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= 50V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 0.25V(Max) @IC=100mA APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

High hFE Transistor, TO-126, 50V, 0.15A

• High DC Current Gain : hFE=600~3600.;

TO-126 PACKAGE

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TO-126 PACKAGE

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EPITAXIAL PLANAR NPN TRANSISTOR

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DC/DC Converter Applications

DC/DC Converter Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). • High allowable power dissipat

NPN Epitaxial Silicon Transistor

Description Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design. Features • 100 mA Output Current Capability • Built-in Bias Resistor (R1 = 4.7 kΩ, R2 = 47 kΩ) Application • Switching, Interface, and

Vertical Driver (8 channels) for CCD Area Image Sensors

■ Overview The MN3114 is an 8-channel vertical driver for twodimensional interline CCD area image sensors that also integrates a single SUB driver channel on the same chip. Adoption of this IC can reduce both power consumption and parts counts in end products. ■ Features • Vertical driver bloc

FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION

DEVICE DESCRIPTION The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR cellular telephones etc. with a minimum of external components. FEATURES • Provides bias for GaAs and HEMT FETs • Drives up to three FETs

Audio Frequency Amplifier High Frequency OSC.

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