NPN Epitaxial Silicon Transistor

Description Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design. Features • 100 mA Output Current Capability • Built-in Bias Resistor (R1 = 4.7 kΩ, R2 = 47 kΩ) Application • Switching, Interface, and

NPN Epitaxial Silicon Transistor with Bias Resistor

Description Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design. Features • 100 mA Output Current Capability • Built-in Bias Resistor (R1 = 4.7 kΩ, R2 = 47 kΩ) Application • Switching, Interface, and

NPN Epitaxial Silicon Transistor

Description Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design. Features • 100 mA Output Current Capability • Built-in Bias Resistor (R1 = 4.7 kΩ, R2 = 47 kΩ) Application • Switching, Interface, and

带偏置电阻的 NPN 外延硅晶体管

带内置电阻的晶体管由于其减少的零件数量和简化的电路设计，可极大地节约空间和成本。 •100 mA 输出电流处理能力\n•内置偏置电阻（R1 = 4.7 KΩ、R2 = 47 KΩ）;

丝印代码：R34；NPN Epitaxial Silicon Transistor

Description Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design. Features • 100 mA Output Current Capability • Built-in Bias Resistor (R1 = 4.7 kΩ, R2 = 47 kΩ) Application • Switching, Interface, and

NPN Epitaxial Silicon Transistor with Bias Resistor

Description Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design. Features • 100 mA Output Current Capability • Built-in Bias Resistor (R1 = 4.7 kΩ, R2 = 47 kΩ) Application • Switching, Interface, and

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：剪切带（CT）带盒（TB） 描述：TRANS PREBIAS NPN 50V SOT23-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

DC/DC Converter Applications

DC/DC Converter Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). • High allowable power dissipat

Vertical Driver (8 channels) for CCD Area Image Sensors

■ Overview The MN3114 is an 8-channel vertical driver for twodimensional interline CCD area image sensors that also integrates a single SUB driver channel on the same chip. Adoption of this IC can reduce both power consumption and parts counts in end products. ■ Features • Vertical driver bloc

FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION

DEVICE DESCRIPTION The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR cellular telephones etc. with a minimum of external components. FEATURES • Provides bias for GaAs and HEMT FETs • Drives up to three FETs

Audio Frequency Amplifier High Frequency OSC.

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