SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE

FOR MUTING AND SWITCHING APPLICATION.\n\nFEATURES\nHigh Emitter-Base Voltage : VEBO=25V(Min.)\nHigh Reverse hFE\n : Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)\nLow on Resistance : RON=1 (Typ.), (IB=5mA) High Emitter-Base Voltage : VEBO=25V(Min.)\nHigh Reverse hFE\n : Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)\nLow on Resistance : RON=1 (Typ.), (IB=5mA);

SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(FOR MUTING AND SWITCHING)

FOR MUTING AND SWITCHING APPLICATION. FEATURES • High Emitter-Base Voltage : VEBO=25V(Min.) • High Reverse hFE : Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) • Low on Resistance : RON=1Ω (Typ.), (IB=5mA)

SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE

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