SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(FOR MUTING AND SWITCHING)

FOR MUTING AND SWITCHING APPLICATION. FEATURES • High Emitter-Base Voltage : VEBO=25V(Min.) • High Reverse hFE : Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) • Low on Resistance : RON=1Ω (Typ.), (IB=5mA)

Audio Muting Transistor, TO-92, 20V, 0.3A

• High Emitter-Base Voltage : VEBO=25V(min.) \n• High Reverse hFE : Reverse hFE=150(typ.) (VCE=-2V, Ic=-4mA)\n• Low on Resistance : Ron=1ohm(typ.), (IB=5mA);

SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE

文件：405.43 Kbytes Page：3 Pages

SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE

FOR MUTING AND SWITCHING APPLICATION.\n\nFEATURES\nHigh Emitter-Base Voltage : VEBO=25V(Min.)\nHigh Reverse hFE\n : Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)\nLow on Resistance : RON=1 (Typ.), (IB=5mA) High Emitter-Base Voltage : VEBO=25V(Min.)\nHigh Reverse hFE\n : Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)\nLow on Resistance : RON=1 (Typ.), (IB=5mA);

SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE

文件：405.43 Kbytes Page：3 Pages

SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE

文件：405.44 Kbytes Page：3 Pages

350 MHz Center Frequency

文件：86.16 Kbytes Page：2 Pages

1.2A High-Brightness Flash LED Driver with Single-Wire Serial Interface

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High Efficiency, Synchronous, Step-down (Buck) Controllers

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