EPITAXIAL PLANAR NPN TRANSISTOR (LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING)

LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS FEATURES • High breakdown voltage VCEO 120V, high current 1A. • Low saturation voltage and good linearity of hFE. • Complementary to KTA1045D/L

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 120V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.4V(Max) @IC= 0.5A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

Bipolar Transistor

EPITAXIAL PLANAR NPN TRANSISTOR

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Directional Couplers Multi-Octave

Features • Flat Frequency Response • Frequency Range: 0.5 - 18 GHz • Multi-Octave Bandwidths • Temperature Range: -54°C to +125°C • Meets MIL-E-5400 Environments

Directional Couplers, Multi-Octave

Features • Flat Frequency Response • Frequency Range: 0.5 - 18 GHz • Multi-Octave Bandwidths • Temperature Range: -54°C to +125°C • Meets MIL-E-5400 Environments

FEMALE THREADED STANDOFFS

[KEYSTONE] THREADED STANDOFFS

THREADED STANDOFFS

[KEYSTONE] THREADED STANDOFFS

Industrial VRS Magnetic Speed Sensors

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