EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). • Complementary to KTA1042D/L.

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 2.0V(Max) @IC= 4A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

General Purpose Transistor, IPAK, 100V, 5A

EPITAXIAL PLANAR NPN TRANSISTOR

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MMIC mixer

DESCRIPTION Silicon double poly MMIC mixer in a 6-lead plastic SOT363 package. FEATURES • Large frequency range: – Cellular band (900 MHz) – PCS band (1900 MHz) – WLAN band (2.4 GHz). • High isolation • High linearity • High conversion gain. APPLICATIONS Receiver side of

ALL DIMENSIONS ARE IN MILLIMETERS

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PIEZO CERAMIC BENDER

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B2000RW SERIES

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Compact 1 x 2 Inch 20W Wide Input Range DC/DC Con vert ers

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