EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). • Complementary to KTA1042D/L.

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low collector-to-emitter saturation voltage. ·Fast switching speed

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 2.0V(Max) @IC= 4A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

General Purpose Transistor, DPAK, 100V, 5A

EPITAXIAL PLANAR NPN TRANSISTOR

文件：59.29 Kbytes Page：2 Pages

MMIC mixer

DESCRIPTION Silicon double poly MMIC mixer in a 6-lead plastic SOT363 package. FEATURES • Large frequency range: – Cellular band (900 MHz) – PCS band (1900 MHz) – WLAN band (2.4 GHz). • High isolation • High linearity • High conversion gain. APPLICATIONS Receiver side of

ALL DIMENSIONS ARE IN MILLIMETERS

文件：259.649 Kbytes Page：1 Pages

PIEZO CERAMIC BENDER

文件：53.25 Kbytes Page：1 Pages

B2000RW SERIES

文件：287.29 Kbytes Page：2 Pages

Compact 1 x 2 Inch 20W Wide Input Range DC/DC Con vert ers

文件：261.56 Kbytes Page：2 Pages