EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING)

HIGH CURRENT SWITCHING APPLICATION. FEATURES • Low Collector Emitter Saturation Voltage. : VCE(sat)=0.4V(Max.) (IC=4A) • High Current and High fT : IC=8A, fT=180MHz. • Excellent Linearity of hFE • High Speed Switching Time. : fT=20nS (Typ.) • Complementary to KTA1204D/L APPLICAT

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.4V(Max) @IC= 4A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING)

HIGH CURRENT SWITCHING APPLICATION. FEATURES • Low Collector Emitter Saturation Voltage. : VCE(sat)=0.4V(Max.) (IC=4A) • High Current and High fT : IC=8A, fT=180MHz. • Excellent Linearity of hFE • High Speed Switching Time. : fT=20nS (Typ.) • Complementary to KTA1204D/L APPLICAT

EPITAXIAL PLANAR NPN TRANSISTOR

HIGH CURRENT SWITCHING APPLICATION.FEATURES\n• Low Collector Emitter Saturation Voltage.\n   : VCE(sat)=0.4V(Max.) (IC=4A)\n• High Current and High fT\n   : IC=8A, fT=180MHz.\n• Excellent Linearity of hFE\n• High Speed Switching Time.\n   : fT=20nS (Typ.)\n• Complementary to KTA1204D/LAPPLICATION\n  • Low Collector Emitter Saturation Voltage.\n   : VCE(sat)=0.4V(Max.) (IC=4A)\n• High Current and High fT\n   : IC=8A, fT=180MHz.\n• Excellent Linearity of hFE\n• High Speed Switching Time.\n   : fT=20nS (Typ.)\n• Complementary to KTA1204D/LAPPLICATION\n   Relay drivers, high-speed inverters, conver;

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING)

HIGH CURRENT SWITCHING APPLICATION. FEATURES • Low Collector Emitter Saturation Voltage. : VCE(sat)=0.4V(Max.) (IC=4A) • High Current and High fT : IC=8A, fT=180MHz. • Excellent Linearity of hFE • High Speed Switching Time. : fT=20nS (Typ.) • Complementary to KTA1204D/L APPLICAT

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.4V(Max) @IC= 4A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

1.8 GHz LOW NOISE AMPLIFIER AND DOWNMIXER GaAs MONOLITHIC INTEGRATED CIRCUIT

Designed primarily for use in DECT, Japan Personal Handy Phone (JPHP), and other wireless Personal Communication Systems (PCS) applications. The MRFIC1804 includes a low noise amplifier and downmixer in a low-cost SOIC-16 package. The integrated circuit requires minimal off-chip matching while all

Integrated Circuit Vertical Deflection Circuit for Large Screen TV

Description: The NTE1804 is an integrated circuit in a 13–Lead SIP type package designed for vertical deflection in video monitors and large screen color television receivers, e.g. 30AX and PIL–S4 systems. Features: Oscillator; Switch Capability for 50Hz/60Hz Operation Synchronizatio

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1804 is a switching device which can be driven directly by a 4.5 V power source. The µPA1804 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages