EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING)

HIGH CURRENT SWITCHING APPLICATION. FEATURES • Low Collector Emitter Saturation Voltage. : VCE(sat)=0.4V(Max.) (IC=4A) • High Current and High fT : IC=8A, fT=180MHz. • Excellent Linearity of hFE • High Speed Switching Time. : fT=20nS (Typ.) • Complementary to KTA1204D/L APPLICAT

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.4V(Max) @IC= 4A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

EPITAXIAL PLANAR NPN TRANSISTOR

Heyco짰 Original Strain Relief Bushings

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Original Strain Relief Bushings

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FEMALE THREADED STANDOFFS

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Microphone Cable

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28 AWG stranded (19x40) high-conductivity silver plated copper alloy conductors, polypropylene insulation, tinned copper braid shield

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