High Voltage High Speed Power Switch Application

Features • High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling Diode • Suitable for Electronic Ballast Application • Small Variance in Storage Time • Two Package Choices; D-PAK or TO-220

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 1000V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.6V(Max) @IC= 0.4A APPLICATIONS · Low frequency amplifier

NPN Silicon Transistor, Planar Silicon Transistor

Features • High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling Diode • Suitable for Electronic Ballast Application • Small Variance in Storage Time • Two Package Choices; D-PAK or TO-220

NPN Silicon Transistor Planar Silicon Transistor

NPN Silicon Transistor, Planar Silicon Transistor

Features • High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling Diode • Suitable for Electronic Ballast Application • Small Variance in Storage Time • Two Package Choices; D-PAK or TO-220

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 525V 2A TO252AA 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：管件 描述：TRANS NPN 450V 2A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Introduction to Knowles Precision Devices

Applications  RF amplifier  LC Filters and Networks  Broadband Wireless LAN  Medical Devices  Cordless and Cellular phones  DR/Crystal Oscillator  Microstrip line filters

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