NPN Epitaxial Silicon Transistor

Features ● Collector-Emitter Voltage : VCEO=120V ● Current Gain Bandwidth Productor : fT=120MHz ● Collector Dissipation : PC=1 to 2W in Mounted on Ceramic Board

Power Amplifier

NPN Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage : VCEO=120V • Current Gain Bandwidth Productor : fT=120MHz • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1201

NPN Epitaxial Silicon Transistor

文件：431.78 Kbytes Page：5 Pages

NPN Epitaxial Silicon Transistor

文件：431.78 Kbytes Page：5 Pages

封装/外壳：TO-243AA 包装：散装 描述：TRANS NPN 120V 0.8A SOT89-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-243AA 包装：散装 描述：TRANS NPN 120V 0.8A SOT89-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Bases for ADN-Serie Cabinets

Product Description Bases for ADN-Serie Cabinets. The base is constructed out of four side and four corner profiles which correspond to the depth and width of the cabinet.

Silicon NPN Epitaxial Planar Transistor

Description • High breakdown voltage, BVCEO≥ 200V • Large continuous collector current capability • Low collector saturation voltage • RoHS compliant package

440 MHz Center Frequency

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Open/Closed Bushings

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KR Electronics part number 440 MHz bandpass filter

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