NPN GENERAL PURPOSE APPLICATIONS HIGH TOTAL POWER DISIPATION)

GENERAL PURPOSE APPLICATIONS HIGH TOTAL POWER DISIPATION (PT = 600 mW) High hFE and LOW VCE(sat)

General Purpose Applications

General Purpose Applications • High hFE and Low VCE (sat)

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：TRANS NPN 25V 0.7A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS NPN 25V 0.7A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

1.0 Watt - 28 Volts, Class C Microwave 2000 MHz

GENERAL DESCRIPTION The 2001 is a COMMON BASE transistor capable of providing 1 Watts Class C, RF output power at 2000 MHz. Gold Metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

US Power Supply Cord with IEC Connector C13, V-Lock, straight

Description - Power Cord, Protection class I, Pin temperature 70 °C, - with V-Lock interlocking system

7½-Digit High Performance Multimeter 8½-Digit High Performance Multimeter

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Snap Bushings

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boxes and ancillary products

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