NPN (AM FREQUENCY CONVERTER IF AMPLIFIER)

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NPN (AM FREQUENCY CONVERTER IF AMPLIFIER)

KSC1845: NPN Epitaxial Silicon Transistor

KSC1845 KSA992 的补充器件\n音频频率低噪声放大器;

NPN Epitaxial Silicon Transistor

Features • Audio Frequency Low-Noise Amplifier • Complement to KSA992

NPN (AUDIO FREQUENCY LOW NOISE AMPLIFIER)

NPN Epitaxial Silicon Transistor • Complement to KSA992

Audio Frequency Low Noise Amplifier

NPN Epitaxial Silicon Transistor • Complement to KSA992

50 mA, 120 V NPN Epitaxial Bipolar Junction Transistor

50 mA, 120 V NPN Epitaxial Bipolar Junction Transistor in TO-92 package • Complement to KSA992\n• Supports balanced push-pull configurations\n• Audio Frequency Low Noise Amplifier;

丝印代码：C1845；NPN Epitaxial Silicon Transistor

Features • Audio Frequency Low-Noise Amplifier • Complement to KSA992

Audio Frequency Low Noise Amplifier

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封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：TRANS NPN 120V 0.05A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS NPN 120V 0.05A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Audio Frequency Low Noise Amplifier

文件：55.02 Kbytes Page：5 Pages

Array LED 2 mm LED, Diffused

Features ● colored, diffused package ● for use as optical indicator ● available as multiple array (LED) ● load dump resistant acc. to DIN 40839

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance @ 945 MHz, 28 Volts

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance @ 945 MHz, 28 Volts

Silicon Complementary Transistors Audio Power Amp, Switch

Description: The NTE184 (NPN) and NTE185 (PNP) are silicon complementary transistors in a TO126 plastic package designed for use in power amplifier and switching circuits. Features: • Excellent Safe Area Limits

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE