LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance @ 945 MHz, 28 Volts

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance @ 945 MHz, 28 Volt

1.0 GHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance

FEATURES • Useful life: up to 2000 h at 105 °C • Very low ESR and high ripple current • High voltages up to 100 V • SMD-version with base plate, lead (Pb)-free reflow solderable • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

GERMANIUM SMALL SIGNAL TRANSISTORS

[Germanium Power Devices Corporation] GERMANIUM SMALL SIGNAL TRANSISTORS PRO ELECTRON TYPES

Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance

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Carbon Composition Molded OD/OF Series (5 Tol.) OA Series (10)

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12Vdc distributed power architectures Mid-End Blade Network Equipment

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