EPITAXIAL PLANAR NPN/PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • Including two devices in USV. (Ultra Super mini type with 5 leads.) • With Built-in bias resistors. • Simplify circuit design. • Reduce a quantity of parts and manufacturing process.

EPITAXIAL PLANAR NPN/PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • Including two devices in TESV. (Thin Extreme Super mini type with 5 pin.) • With Built-in bias resistors. • Simplify circuit design. • Reduce a quantity of parts and manufacturing process.

EPITAXIAL PLANAR NPN/PNP TRANSISTOR USV

SWITCHING APPLICATION.\nINTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.FEATURES\nIncluding two devices in USV. (Ultra Super mini type with 5 leads.)\nWith Built-in bias resistors.\nSimplify circuit design.\nReduce a quantity of parts and manufacturing process. Including two devices in USV. (Ultra Super mini type with 5 leads.)\nWith Built-in bias resistors.\nSimplify circuit design.\nReduce a quantity of parts and manufacturing process.\n ;

Complex BRT, TESV, 50V, 0.1A

• With Built-in Bias Resistors.\n• Simplify Circuit Design.\n• Reduce a Quantity of Parts and Manufacturing Process;

EPITAXIAL PLANAR NPN/PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • Including two devices in TESV. (Thin Extreme Super mini type with 5 pin.) • With Built-in bias resistors. • Simplify circuit design. • Reduce a quantity of parts and manufacturing process.

EPITAXIAL PLANAR NPN/PNP TRANSISTOR INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • Including two devices in TFSV. (Thin Fine Pitch Super mini 5pin Package.) • With Built-in bias resistors. • Simplify circuit design. • Reduce a quantity of parts and manufacturing process.

TFSV Built in Bias Resistor NPN_PNP 20V 0.05 -20 150A 0.1W 47 47 47 47

• Including two devices in TFSV.\n• With Built-in bias resistors. \n• Reduce a quantity of parts and manufacturing process. ;

EPITAXIAL PLANAR NPN/PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • Including two devices in USV. (Ultra Super mini type with 5 leads.) • With Built-in bias resistors. • Simplify circuit design. • Reduce a quantity of parts and manufacturing process.

HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors Annular PNPN devices designed for low cost, high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive

JFET VHF Amplifier

JFET VHF Amplifier N–Channel — Depletion

SCHOTTKY BARRIER RECTIFIERS(1.0A,20-60V)

POWER TRANSISTORS(8A,60-100V,80W)

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP